Semiconductor device manufacturing method

ABSTRACT

The semiconductor device manufacturing method comprises the step of transferring patterns formed on a reticle to a semiconductor substrate by an exposure with oblique incidence illumination. In the step of making the exposure with oblique incidence illumination, the exposure is made with an aperture stop  16  including a first ring-shaped aperture  22 , and a plurality of second apertures  24   a   1 - 24   a   4  formed around the first ring-shaped aperture  22 . The exposure is made with an aperture stop  16  having the first ring-shaped aperture  22  which can transfer patterns arranged at a medium pitch to a relatively large pitch with a relatively high resolution and the second aperture  24   a   1 - 24   a   4  which can transfer patterns arranged at a relatively small pitch with a relatively high resolution, whereby even when the patterns are arranged at various pitch values, the DOF can be surely sufficient, and the patterns can be stably transferred.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of application Ser. No. 11/698,062,filed Jan. 26, 2007, which claims the benefit of priorities from theprior Japanese Patent Application No. 2006-19549, filed on Jan. 27,2006, and the prior Japanese Patent Application No. 2006-355162, filedon Dec. 28, 2006, the entire contents of which are incorporated hereinby reference.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device manufacturingmethod, more specifically, a semiconductor device manufacturing methodusing oblique incidence illumination.

Semiconductor devices have been continuously required to be micronized,and recently, patterns of a line width shorter than a wavelength of theexposure light source used in the manufacturing process of asemiconductor device are required to be formed.

Accompanying this, recently various illumination techniques forimproving the resolution for transferring patterns are proposed. As suchillumination technique, oblique incidence illumination (off-axisillumination), for example, is proposed. The oblique incidenceillumination is largely divided in modified illumination and annularillumination. As major types of the modified illumination, e.g.,two-point illumination (double polar illumination), wherein twoapertures are formed in the aperture stop of the illumination system, isknown, and four-point illumination (quadrupole illumination), whereinfour apertures are formed in the aperture stop of the illuminationsystem, is known. On the other hand, in the annular illumination, anannular aperture is provided in the aperture stop of the illuminationsystem. The size of the aperture of the annular illumination isexpressed by the outer sigma (σ_(out)), the inner sigma (σ_(in)) orothers. FIG. 18 is a plan view of the conventional aperture stop of theannular illumination. In FIG. 18, the outer border indicates the borderof the effective region of the aperture stop. As illustrated in FIG. 18,a ring-shaped aperture 122 is formed in the annular illumination stop.FIG. 19 is a graph of the relationship between the pitch of patterns andthe depth of focus (DOF). In FIG. 19, the pitch of patterns is taken onthe horizontal axis, and on the vertical axis, the DOF is taken. In FIG.19, the DOF is the value with the exposure latitude is 4%.

In FIG. 19, the ● marks indicate the DOF given when the conventionalannular illumination stop 116 illustrated in FIG. 18 is used in theillumination system. As indicated by the ● marks in FIG. 19, when theexposure is made with the conventional annular illumination stop, theDOF cannot be always sufficiently large in the range where the pitch ofthe patterns is about 300 nm or over.

FIG. 20A is a plan view of the layout of the mask pattern for formingholes. In FIG. 20A, on the left side of the drawing, patterns 118 a forforming holes are formed on the reticle with high density. On the otherhand, on the right side of the drawing of FIG. 20A, an isolated pattern118 b for forming a hole is formed on the reticle.

FIG. 20B is a graph of critical dimension-focus (CD-FOCUS) curves (Part1). In FIG. 20B, the □ marks indicate the CD-FOCUS curve of the case ofthe left side of the drawing of FIG. 20A, i.e., the patterns 118 a forforming holes are formed relatively densely. In FIG. 20B, the ◯ marksindicate the case of the right side of the drawing of FIG. 20A, i.e.,the pattern 118 b for forming a hole is formed isolated. Such CD-FOCUScurves show what influences changes of the DOF give on the resist size.In FIG. 20B, the shift of the focus in exposing the patterns is taken onthe horizontal axis. On the vertical axis, the size of the patternstransferred on a resist is taken, and relative pattern sizes to themaximum size of the patterns which is set at 100 are plotted. Theinclination of an upward parabola being relatively blunt means that theDOF is relatively wide, and the focus margin is relatively large. On theother hand, the inclination of an upward parabola being relatively acutemeans that the DOF is relatively narrow, and the focus margin isrelatively small. The focus value at the summit of a parabola is calleda best focus, and generally the resist size is largest at the bestfocus. Generally, in comparing the DOF, the focus range where the resistsize is 90% or above of the resist size at the best focus is used as theeffective DOF.

In FIG. 20B, as indicated by the ◯ marks, when the pattern 118 b forforming a hole is isolated, the focus margin is considerably small.

As a technique of making the focus margin larger, it is proposed to usethe exposure technique using together the annular illumination stop andthe sub-resolution assist feature (SRAF) technique.

FIG. 21A is a plan view of the mask pattern having assist patterns forincreasing the DOF. FIG. 21B a graph of CD-FOCUS curves (Part 2). Asillustrated in FIG. 21A, the patterns 121 for increasing the DOF areformed around a pattern for forming a hole.

The □ marks in FIG. 21B are the same as the □ marks in FIG. 20B, i.e.,the left side of the drawing of FIG. 20A, i.e., the case that thepatterns 118 a for forming holes are formed with relative high density.In FIG. 21B, the ◯ marks are the same as the ◯ marks in FIG. 20B, i.e.,the right side of the drawing of FIG. 20A, i.e., the case that thepattern 118 b for forming a hole is formed isolated. In FIG. 21B, the Δmarks indicate the case of FIG. 21A, i.e., the case that the assistpatterns 121 are formed around the pattern 118 c for forming a hole.

As seen in FIG. 21B, the assist patterns 121 are suitably provided (seeFIG. 21A), whereby the focus margin can be increased in comparison withthe case that the pattern for forming a hole is isolated (see FIG. 20A).

In FIG. 19, the ◯ marks indicate the graph of the case that the assistpatterns are suitably formed on the reticle over the region where thepatterns are dense to the region where the patterns are rare. Asindicated by the ◯ marks in FIG. 19, the use of the SRAF technique couldsomewhat increase the DOF.

Following references disclose the background art of the presentinvention.

-   [Patent Reference 1]-   Specification of Japanese Patent Application Unexamined Publication    No. 2002-122976-   [Patent Reference 2]-   Specification of Japanese Patent Application Unexamined Publication    No. 2003-234285

However, as indicated by the ◯ marks in FIG. 19, even the combined useof the oblique incidence illumination technique and the SRAF techniquecannot always give sufficiently large DOF in the range of, e.g., about300 nm-600 nm pattern pitch. Then, a technique which can transfer with ahigh resolution all patterns which are formed on a reticle at variouspitches is expected.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor devicemanufacturing method which can transfer stably with a high resolutionall patterns which are formed on a reticle at various pitches.

According to one aspect of the present invention, there is provided asemiconductor device manufacturing method comprising the step oftransferring patterns formed on a reticle to a semiconductor substrateby the exposure using oblique incidence illumination, in the step ofmaking the exposure with oblique incidence illumination, the exposure ismade with an aperture stop including a first ring-shaped aperture, and aplurality of second apertures formed around the first ring-shapedaperture.

According to another aspect of the present invention, there is provideda semiconductor device manufacturing method comprising the step oftransferring patterns formed on a reticle to a semiconductor substrateby an exposure using oblique incidence illumination, the step of makingthe exposure with oblique incidence illumination comprising the stepsof: making an exposure with a first aperture stop including a firstring-shaped aperture formed in a center part; and making an exposurewith a second aperture stop including a plurality of second aperturesformed in a peripheral part.

According to further another aspect of the present invention, there isprovided a semiconductor device manufacturing method comprising the stepof transferring patterns formed on a reticle to a semiconductorsubstrate by an exposure using oblique incidence illumination, in thestep of making the exposure with oblique incidence illumination, theexposure is made with an aperture stop including a first aperture, asecond ring-shaped aperture formed around the first aperture, and athird ring-shaped aperture formed around the second aperture.

According to further another aspect of the present invention, there isprovided a semiconductor device manufacturing method comprising the stepof transferring patterns formed on a reticle to a semiconductorsubstrate by an exposure using oblique incidence illumination, the stepof making the exposure with oblique incidence illumination comprises thesteps of: making an exposure with a first aperture stop including afirst aperture; making an exposure with a second aperture including asecond ring-shaped aperture having an inner diameter which is largerthan an outer diameter of the first aperture; and making an exposurewith a third aperture stop including a third ring-shaped aperture havingan inner diameter which is larger than an outer diameter of the secondaperture.

According to the present invention, the exposure is made with anaperture stop having the first ring-shaped aperture which can transferpatterns arranged at a medium pitch to a relatively large pitch with arelatively high resolution and the second aperture which can transferpatterns arranged at a relatively small pitch with a relatively highresolution, whereby even when the patterns are arranged at various pitchvalues, the DOF can be surely sufficient, and the patterns can be stablytransferred.

According to the present invention, the first exposure is made with thefirst aperture stop having the first ring-shaped aperture which cantransfer patterns arranged at a medium pitch to a relatively large pitchwith a relatively high resolution, and the second exposure is made witha second aperture stop having the second aperture which can transferpatterns arranged at a relatively small pitch with a relatively highresolution, whereby even when the patterns are arranged at various pitchvalues, the DOF can be surely sufficient, and the patterns can be stablytransferred.

According to the present invention, patterns are transferred with anaperture stop further having the third ring-shaped aperture formedaround the first ring-shaped aperture, whereby even when the patternsfor forming holes are arranged in various directions, the DOF can besurely sufficient, and the patterns can be stably transferred.

According to the present invention, patterns are transferred with anaperture stop having the first circular aperture formed in the center,the second ring-shaped aperture formed around the first aperture and thethird ring-shaped aperture formed around the second aperture. The firstaperture contributes to transferring isolated patterns with a relativelyhigh resolution. The second aperture contributes to transferringpatterns arranged at a medium pitch to a relatively large pitch with arelatively high resolution. The third aperture contributes totransferring patterns arranged at a relatively small pitch with arelatively high resolution. The third aperture also contributes totransferring patterns arranged in a various direction with a relativelyhigh resolution. Thus, according to the present invention, even whenpatterns for forming holes are set at various pitch values in variousdirection, the DOF can be surly sufficient, and the patterns can bestably transferred.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a conceptual view of the aligner used in the semiconductordevice manufacturing method according to a first embodiment of thepresent invention.

FIG. 2 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to the first embodiment of thepresent invention.

FIGS. 3A and 3B are conceptual views of the principle of the halftonephase shift mask.

FIG. 4 is a graph (Part 1) of the relationship between the pattern pitchand the DOF.

FIGS. 5A and 5B are plan views of the annular illumination stop and thequadrupole illumination stop.

FIGS. 6A to 5E are sectional views of a semiconductor device in thesteps of the semiconductor device manufacturing method according to thefirst embodiment, which illustrate the method.

FIG. 7 is a plan view of a reticle with assist patterns formed on.

FIG. 8 is a plan view of the aperture stop used in the semiconductordevice manufacturing method according to Modification 1 of the firstembodiment of the present invention.

FIG. 9 is a plan view of the aperture stop used in the semiconductordevice manufacturing method according to Modification 2 of the firstembodiment of the present invention.

FIG. 10 is a plan view of the aperture stop used in the semiconductordevice manufacturing method according to Modification 3 of the firstembodiment of the present invention.

FIG. 11 is a plan view of the aperture stop used in the semiconductordevice manufacturing method according to Modification 4 of the firstembodiment of the present invention.

FIGS. 12A and 12B are plan views of an aperture stop used in thesemiconductor device manufacturing method according to a secondembodiment of the present invention.

FIGS. 13A to 13E are sectional view of a semiconductor device in thesteps of the semiconductor device manufacturing method according to thesecond embodiment, which illustrate the method.

FIGS. 14A and 14B are plan views of the aperture stop used in thesemiconductor device manufacturing method according to Modification 1 ofthe second embodiment of the present invention.

FIGS. 15A and 15B are plan views of the aperture stop used in thesemiconductor device manufacturing method according to Modification 2 ofthe second embodiment of the present invention.

FIGS. 16A and 16B are plan views of the aperture stop used in thesemiconductor device manufacturing method according to Modification 3 ofthe second embodiment of the present invention.

FIGS. 17A and 17B are plan views of the aperture stop used in thesemiconductor device manufacturing method according to Modification 4 ofthe second embodiment of the present invention.

FIG. 18 is a plan view of the aperture stop of the conventional annularillumination.

FIG. 19 is a graph of the relationship between the pattern pitch and theDOF.

FIGS. 20A and 20B are a plan view of the layout of the patterns forforming holes.

FIGS. 21A and 21B are a plan view of the layout of the pattern withassist patterns provided for the proximity effect correction.

FIG. 22 is a plan view of the reticle with the patterns arranged in asquare lattice.

FIG. 23 is a graph of the relationship between the space size and theDOF given when the patterns arranged in a square lattice aretransferred.

FIG. 24 is a plan view of the usual aperture stop.

FIG. 25 is a plan view of the reticle with the patterns arranged in anoblique direction.

FIG. 26 is a graph of the relationship between the space size and theDOF given when the patterns arranged oblique are transferred.

FIG. 27 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to a third embodiment of thepresent invention.

FIG. 28 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to Modification 1 of the thirdembodiment of the present invention.

FIG. 29 is a graph (Part 1) of the relationship between the space sizeand the DOF given when the patterns arranged in a square lattice aretransferred.

FIG. 30 is a graph (Part 1) of the relationship between the space sizeand the DOF given when the patterns arranged oblique are transferred.

FIG. 31 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to Modification 2 of the thirdembodiment of the present invention.

FIG. 32 is a graph (Part 2) of the relationship between the space sizeand the DOF given when the patterns arranged in a square lattice aretransferred.

FIG. 33 is a graph (Part 2) of the relationship between the space sizeand the DOF given when the patterns arranged oblique are transferred.

FIG. 34 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to Modification 3 of the thirdembodiment of the present invention.

FIG. 35 is a graph (Part 3) of the relationship between the space sizeand the DOF given when the patterns arranged in a square lattice aretransferred.

FIG. 36 is a graph (Part 3) of the relationship between the space sizeand the DOF given when the patterns arranged oblique are transferred.

FIG. 37 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to Modification 4 of the thirdembodiment of the present invention.

FIG. 38 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to Modification 5 of the thirdembodiment of the present invention.

FIG. 39 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to Modification 6 of the thirdembodiment of the present invention.

FIGS. 40A to 40C are plan views of an aperture stop used in thesemiconductor device manufacturing method according to a fourthembodiment of the present invention.

FIGS. 41A and 41B are plan views of an aperture stop used in thesemiconductor device manufacturing method according to Modification 1 ofthe fourth embodiment of the present invention.

FIGS. 42A and 42B are plan views of an aperture stop used in thesemiconductor device manufacturing method according to Modification 2 ofthe fourth embodiment of the present invention.

FIGS. 43A and 43B are plan views of an aperture stop used in thesemiconductor device manufacturing method according to Modification 3 ofthe fourth embodiment of the present invention.

FIG. 44 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to a fifth embodiment of thepresent invention.

FIGS. 45A to 45C are plan views of an aperture stop used in thesemiconductor device manufacturing method according to a sixthembodiment of the present invention.

FIGS. 46A and 46B are plan views of an aperture stop used in thesemiconductor device manufacturing method according to Modification 1 ofthe sixth embodiment of the present invention.

FIGS. 47A and 47B are plan views of an aperture stop used in thesemiconductor device manufacturing method according to Modification 2 ofthe sixth embodiment of the present invention.

FIGS. 48A and 48B are plan views of an aperture stop used in thesemiconductor device manufacturing method according to Modification 3 ofthe sixth embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION A First Embodiment

The semiconductor device manufacturing method according to a firstembodiment of the present invention will be explained with reference toFIGS. 1 to 5B. FIG. 1 is a conceptual view of the aligner used in thesemiconductor device manufacturing method according to the presentembodiment. FIG. 2 is a plan view illustrating the aperture stop used inthe semiconductor device manufacturing method according to the presentembodiment. FIGS. 3A and 3B are conceptual views illustrating theprinciple of a halftone phase shift mask. FIG. 4 is a graph of therelationship between the pattern pitch and the DOF. FIGS. 5A and 5B areplan views of the annular illumination stop and the quadrupoleillumination stop.

First, the aligner used in the exposure step of the present embodimentwill be explained with reference to FIG. 1.

As illustrated in FIG. 1, a light source 12 is, e.g., an ArF excimerlaser. In FIG. 1, the light source 12 is schematically illustrated.

Below the light source 12, a fly eye 14 for aligning light from thelight source 12 in the same direction is provided.

Below the fly eye 14, an aperture stop 16 is provided.

The aperture stop 16 used in the present embodiment is an aperture stopwhose aperture is not positioned on the optical axis, i.e., an aperturestop for the oblique incidence illumination. In other words, theaperture stop 16 used in the present embodiment, as illustrated in FIG.2, includes a first ring-shaped aperture 22 formed at the center, and aplurality of second apertures 24 a 1-24 a 4 formed around the firstaperture 22. The outer sigma (σ_(out)) of the first aperture 22 and theinner sigma (σ_(in)) are set respectively smaller than the outer sigmaσ_(out) and the inner sigma σ_(in) of the aperture 122 of theconventional annular illumination stop. The second aperture 24 a 1-24 a4 are arranged in square directions of the aperture stop 16 respectivelycorresponding to the directions from the center of a reticle 18 to thefour corners thereof. The second apertures 24 a 1-24 a 4 are arrangedwith parts thereof being outside an effective region (the outermostborder in FIG. 2) of the aperture stop 16. The effective region of theaperture stop is a region which can actually function as the stop. InFIG. 2, the outside of the effective region of the stop is notillustrated, but actually, the outside of an effective region of anaperture stop is generally shaded.

The respective sizes of the aperture stop 16 are as exemplified below.The outer diameter of the effective region of the aperture stop 16 is,e.g., 1.0. The size of the outer sigma (σ_(out)) of the first aperture22 is, e.g., 0.4-0.5. The size of the inner sigma (σ_(in)) of the firstaperture 22 is, e.g., 0.2-0.3. The distance between the center of theaperture stop 16 and the centers of the second apertures 24 a 1-24 a 4is, e.g., 0.8-0.9. These sizes are values given by normalizing the outerdiameter of the effective region of the aperture stop 16 to be 1.0. Theapertures 24 a 1-24 a 4 are formed in the directions as exemplifiedbelow with a straight line (hereinafter called a center line) which isparallel with one side of the reticle 18 and passes the center of theaperture stop 16 set as the reference. For example, the angle θ1 formedby the line segment interconnecting the center of the aperture stop 16and the center of the aperture 24 a 1 and the center line of theaperture stop 16 is set at, e.g., 45 degrees. The angle θ2 formed by theline segment interconnecting the center of the aperture stop 16 and thecenter of the aperture 24 a 2 and the center line of the aperture stop16 is set at, e.g., 135 degrees. The angle θ3 formed by the line segmentinterconnecting the center of the aperture stop 16 and the center of theaperture 24 a 3 and the center line of the aperture stop 16 is set at,e.g., 225 degrees. The angle θ4 formed by the line segmentinterconnecting the center of the aperture stop 16 and the center of theaperture 24 a and the center line of the aperture stop 16 is set at,e.g., 315 degrees.

The area S1 of the aperture 22 and the total S2 of the areas of theapertures 24 a 1-24 a 4 are substantially equal to each other.

The diameter of the apertures 24 a 1-24 a 4 is set smaller than theouter sigma σ_(out) of the aperture 22.

Preferably, the central position R_(p) of the respective apertures 24 a1-24 a 4 is set as follows when a wavelength of the light source used inthe exposure is λ, and an arrangement pitch is P.R _(p)=sin⁻¹{λ/[(√2)×P]}

Such aperture stop 16 is used in the present embodiment for the reasonwhich will be detailed later.

Below the aperture stop 16, the reticle (photo mask) 18 having patternsfor forming, e.g., holes formed on is provided.

As illustrated in FIGS. 3A and 3B, the reticle 18 is a halftone phaseshift mask 18, e.g., having semi-transmissive metal thin film patterns17 of MoSi or others formed on a quartz dry plate 15.

FIG. 3A is a sectional view of the halftone phase shift mask, and FIG.3B shows the intensity distribution of the light transmitted by thereticle. In FIG. 3B, the thick line indicates the light intensitydistribution given by using the halftone phase shift mask, and the thinline in FIG. 3B indicates the light intensity distribution given by abinary mask.

The halftone phase shift mask 18 is a mask wherein slight light passesthrough the semi-transmissive metal thin film patterns 17 while thephase of light in the aperture 18 a is reversed with respect to theparts of the metal thin film patterns 17, whereby the light intensity isdecreased at the edge part where the respective light is superimposed oneach other. As indicated by the thick line in FIG. 3B, at the edge partof the aperture 18 a, slight light transmitted by the semi-transmissviemetal thin film patterns 17 and the light which has passed through theaperture 18 a null each other, whereby the light intensity distributionis decreased. Accordingly, the halftone phase shift mask 18 isadvantageous in obtaining high resolutions.

The reticle 18 can be a binary mask which is a mask, e.g., havingpatterns of shade film of chrome or others formed on a quartz dry plate.The reticle 18 can be a Levinson phase shift mask having the effect thatwhen specific light is transmitted by the quart dry plate, the light hasthe phases of 0 degree and 180 degrees.

Below the reticle 18, a projection lens 19 is disposed.

Below the projection lens 19, a semiconductor substrate (semiconductorwafer) 22 is disposed.

By the exposure by such aligner, the patterns formed on the reticle 18are transferred on the semiconductor substrate 20.

In the present embodiment, the aperture stop illustrated in FIG. 2 isused for the following reason.

FIG. 4 is a graph of the relationship between the pitch of the patternsand the DOF. In FIG. 4, the pitch of the patterns is taken on thehorizontal axis, and the DOF is taken on the vertical axis. The DOF inFIG. 4 is the value with the exposure latitude being 4%.

In FIG. 4, the ● marks indicate the DOF given when the exposure is madewith the conventional annular illumination stop 116 illustrated in FIG.18. As indicated by the ● marks in FIG. 4, by the exposure with theconventional annular illumination stop 116, the DOF cannot be alwayssufficiently large when the pitch of the patterns is about 300 nm orabove.

The ▪ marks in FIG. 4 indicate the DOF given by the exposure with theannular illumination stop 16 e illustrated in FIG. 5A. As seen in thecomparison between FIG. 5A and FIG. 18, the inner sigma σ_(in) of thering-shaped aperture 22 in FIG. 5A is set smaller than the inner sigmaσ_(in) of the ring-shaped aperture 122 in FIG. 18. As seen in thecomparison between FIG. 5A and FIG. 18, the outer sigma σ_(out) of thering-shaped aperture 22 in FIG. 5A is set smaller than the outer sigmaσ_(out) of the ring-shaped aperture 122 in FIG. 18.

As seen in the comparison between the ●-mark plots and the ▪-mark plots,it can be seen that the inner sigma σ_(in) and the outer sigma σ_(out)of the annular illumination stop are varied, whereby the DOFcharacteristics for the pattern pitch are conspicuously changed.

As indicated by the ▪ marks in FIG. 4, when the exposure is made withthe annular illumination stop 16 e illustrated in FIG. 5A, the DOF isrelatively large in the range of the pattern pitch of about 300 nm orover. As indicated by the ▪ marks in FIG. 4, when the exposure is madewith the annular illumination stop illustrated in FIG. 5B, the DOF isnot always sufficiently large in the range of the pattern pitch of 300nm or less.

The ▴ marks in FIG. 4 indicate the DOF given by the exposure with thequadrupole illumination stop 16 f illustrated in FIG. 5B. As indicatedby the ▴ marks in FIG. 4, when the exposure is made with the quadrupoleillumination stop 16 f illustrated in FIG. 5B, as the pitch of thepatterns is increased, the DOF is abruptly decreased. As illustrated bythe ▴ marks in FIG. 4, the DOF cannot be sufficiently large in the rangeof the pattern pitch of above about 300 nm.

The inventors of the present application made earnest studies and haveobtained the idea that the aperture 22 of the annular illumination stop16 e illustrated in FIG. 5A and the apertures 24 a 1-24 a 4 of thequadrupole illumination stop 16 f illustrated in FIG. 5B are combined,whereby merits of both can be utilized, and large DOF can be realized atvarious pitches. That is, the relatively small apertures 24 a 1-24 a 4arranged in square directions with respect to the center of the aperturestop 16 illustrated in FIG. 5A can contribute to transferring thepatterns arranged at a relatively small pitch with a relatively highresolution. On the other hand, the ring-shaped aperture 22 illustratedin FIG. 5B contributes to transferring the patterns arranged at a mediumpitch to a relatively large pitch with a relatively high resolution.

In FIG. 4, the ◯ marks indicate the DOF given by the exposure with theaperture stop 16 illustrated in FIG. 2. As indicated by the ◯ marks inFIG. 4, as the pattern pitch increases, the DOF is decreased to someextent, but the DOF can be sufficiently large even in the range of thepattern pitch of 300 nm or above. Based on this, according to thepresent embodiment, even with the pattern pitch set at various values,the DOF can be sufficiently large, and the patterns can be stablytransferred.

Next, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6E.FIGS. 6A to 6E are sectional views of a semiconductor device in thesteps of the semiconductor device manufacturing method according to thepresent embodiment, which illustrate the method.

First, as illustrated in FIG. 6A, a semiconductor substrate 20 isprepared. An inter-layer insulation film 32 is formed on thesemiconductor substrate 20. On the inter-layer insulation film 32, aphotoresist film 34 is formed. An anti-reflection film is often formedon the upper side or the underside of the photoresist film 34 but is notillustrated in FIGS. 6A to 6E.

Then, the patterns formed on the reticle 18 are transferred onto thephotoresist film 34 with the aligner described above with reference toFIGS. 1 and 2 (see FIG. 6B).

Then, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Then, as illustrated in FIG. 6D, the inter-layer insulation film 32 isetched with the photoresist film 34 as the mask. Thus, the patterns ofholes, etc. are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device according to the present embodiment ismanufactured.

Whether or not assist patterns are provided around the pattern 18 a forforming a hole is not explicitly described here, but as illustrated inFIG. 7, assist patterns 21 may be suitably formed around the pattern 18a. FIG. 7 is a plan view of a reticle having assist patterns formed on.

As illustrated in FIG. 7, the assist patterns 21 are formed around thepattern 18 a for forming a hole. The assist patterns are provided on thereticle as illustrated in FIG. 7, whereby the required patterns can bestably formed.

(Modification 1)

Next, the semiconductor manufacturing method according to Modification 1of the present embodiment will be explained with reference to FIG. 8.FIG. 8 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that second apertures 24 b 1-24b 4 are arranged all inside the effective region of the aperture stop 16a.

In the aperture stop 16 illustrated in FIG. 2, the second apertures 24 a1-24 a 4 are arranged with parts thereof being outside the effectiveregion of the aperture stop 16, but in the present modification, thesecond apertures 24 b 1-24 b 4 are arranged inside the effective regionof the aperture stop 16 a. The effective region of the aperture stop isa region which can actually function as an aperture stop.

The second apertures 24 b 1-24 b 4 may be thus arranged inside theeffective region of the aperture stop 16 a.

In the present modification as well as in the semiconductormanufacturing method according to the first embodiment, even with thepattern pitch being set at various values, the DOF can be surelysufficient, and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming a hole is not explicitly described here, but as illustrated inFIG. 7, assist patterns 21 may be suitably formed around the pattern 18a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be more stably formed.

(Modification 2)

Then, the semiconductor device manufacturing method according toModification 2 of the present embodiment will be explained withreference to FIG. 9. FIG. 9 is a plan view of an aperture stop used inthe semiconductor device manufacturing method according to the presentmodification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that third apertures 26 a 1-26 a4 are further formed around the ring-shaped aperture 22.

As illustrated in FIG. 9, the third apertures 26 a 1-26 a 4 are arrangedrespectively between the second apertures 24 a 1-24 a 4. The thirdapertures 26 a 1-26 a 4 are positioned inside the effective regions ofthe aperture atop 16 b.

In other words, the present modification is characterized in that therelatively small apertures 24 a 1-24 a 4, 26 a 1-26 a 4 are formedoctagonally around the ring-shaped aperture 22.

As described above, the exposure can be made by using the aperture atop16 b having the relatively small apertures 24 a 1-24 a 4, 26 a 1-26 a 4octagonally formed around the ring-shaped aperture 22.

In the present modification as well as in the semiconductor devicemanufacturing method according to the first embodiment, even with thepattern pitch being set at various values, the DOF can be surelysufficient, and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming a hole is not explicitly described here, but the assist patterns21 may be suitably provided around the pattern 18 a as illustrated inFIG. 7. The assist patterns are provided on the reticle as illustratedin FIG. 7, whereby the required patterns can be more stably formed.

(Modification 3)

Next, the semiconductor device manufacturing method according to a thirdmodification of the present embodiment will be explained with referenceto FIG. 10. FIG. 10 is a plan view of an aperture stop used in thesemiconductor device manufacturing method according to the presentmodification.

The semiconductor device manufacturing method according to the presentmodification is mainly characterized in that third apertures 28 a 1-28 a4 are partially positioned inside the ring-shaped aperture 22. Thediameter of the third apertures 28 a 1-28 a 4 is set smaller than thediameter of the second apertures 24 a 1-24 a 4.

As described above, the third apertures 28 a 1-28 a 4 may be partiallypositioned inside the ring-shaped aperture 22.

In the present modification as well in the semiconductor devicemanufacturing method according to the first embodiment, even with thepattern pitch set at various values, the DOF can be surely sufficient,and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming a hole is not explicitly described here, but the assist patterns21 may be suitably provided around the pattern 18 a as illustrated inFIG. 7. The assist patterns are provided on the reticle as illustratedin FIG. 7, whereby the required patterns can be more stably formed.

(Modification 4)

Then, Modification 4 of the semiconductor device manufacturing methodaccording to the present embodiment will be explained with reference toFIG. 11. FIG. 11 is a plan view of an aperture stop used in thesemiconductor device manufacturing method according to the presentmodification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the diameter of the thirdapertures 30 a 1-30 a 4 are much smaller than the diameter of the secondapertures 24 a 1-24 a 4. The diameter of the third apertures 30 a 1-30 a4 is, e.g., 0.1-0.2. The size described here is the value given bynormalizing the outer diameter of the effective region of the aperturestop 16 to be 1.0.

As described above, the diameter of the third apertures 30 a 1-30 a 4may be made smaller than the diameter of the second apertures 24 a 1-24a 4.

In the present modification as well as in the semiconductor devicemanufacturing method according to the first embodiment, even with thepitch of the patterns set at various values, the DOF can be surelysufficient, and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming a hole is not explicitly described here, but the assist patterns21 may be suitably provided around the pattern 18 a as illustrated inFIG. 7. The assist patterns are provided on the reticle as illustratedin FIG. 7, whereby the required patterns can be more stably formed.

A Second Embodiment

The semiconductor device manufacturing method according to a secondembodiment of the present invention will be explained with reference toFIGS. 12A and 12B. FIGS. 12A and 12B are plan views of an aperture stopused in the semiconductor device manufacturing method according to thepresent embodiment. The same members of the present embodiment as thoseof the semiconductor device manufacturing method according to the firstembodiment illustrated in FIGS. 1 to 11 are represented by the samereference numbers not to repeat or to simplify their explanation.

The semiconductor device manufacturing method according to a secondembodiment of the present invention is characterized mainly in that thefirst exposure is made with the first aperture stop 16 e having aring-shaped aperture 22 formed in the center, and then the secondexposure is made with the second aperture stop 16 f having apertures 24a 1-24 a 4 formed in square directions with respect to the center of theaperture stop.

FIG. 12A is a plan view of the first aperture stop 16 e having thering-shaped aperture 22 at the center of the aperture stop. The firstaperture stop 16 e used in the present embodiment has a ring-shapedaperture 22 formed in the center. As seen in comparing FIG. 12A withFIG. 18, the inner sigma σ_(in) of the ring-shaped aperture in FIG. 12Ais set smaller than the inner sigma σ_(in) of the ring-shaped aperture122 in FIG. 18. As seen in comparing FIG. 12A with FIG. 18, the outersigma σ_(out) of the ring-shaped aperture in FIG. 12A is set smallerthan the outer sigma σ_(out) of the ring-shaped aperture 122 in FIG. 18.

The respective sizes of the aperture stop 16 e are as exemplified below.The outer diameter of the effective region of the aperture 16 e is,e.g., 1.0. The size of the outer sigma σ_(out) of the first aperture 22is, e.g., 0.4-0.5. The size of the inner sigma σ_(in) of the firstaperture 22 is, e.g., 0.2-0.3. These sizes are value given bynormalizing the outer diameter of the effective region of the aperturestop 16 e to be 1.0.

FIG. 12B is a plan view of the second aperture stop 16 f having thesecond apertures 24 a 1-24 a 4 in square directions with respect to thecenter. The positions, shape, etc. of the second apertures 24 a 1-24 a 4of the second aperture stop 16 f illustrated in FIG. 12B are the same asthose of the second apertures 24 a 1-24 a 4 of the aperture stopillustrated in FIG. 2.

In the semiconductor device manufacturing method according to thepresent embodiment, patterns formed on a reticle 18 are exposed by usingthe first aperture stop 16 e and is further exposed by using the secondaperture stop 16 f. In the present embodiment, the exposure using thefirst aperture stop 16 e contributes to transferring patterns arrangedat a middle pitch to a relatively large pitch with a relatively highresolution. On the other hand, the exposure using the second aperturestop 16 f contributes to transferring patterns arrange at a relativelysmall pitch with a relatively high resolution. Thus, the presentembodiment as well can produce the same advantageous effect as theexposure using the aperture stop 16 used in the first embodiment, andeven with patterns set a various values, the DOF can be surelysufficient, and the patterns can be stably transferred.

Next, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 13A to 13E.FIGS. 13A to 13E are the sectional views of a semiconductor device inthe steps of the semiconductor device manufacturing method according tothe present embodiment, which illustrate the method.

First, as illustrated in FIG. 13A, a semiconductor substrate 20 isprepared. An inter-layer insulation film is formed on the semiconductorsubstrate 20. A photoresist film 34 is formed on the inter-layerinsulation film 32.

Then, the aperture stop 16 e illustrated in FIG. 12A is mounted on thealigner described above with reference to FIG. 1, and patterns formed ona retile 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20.

Then, the aperture stop 16 f illustrated in FIG. 12B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 13B).

Next, as illustrated in FIG. 13C, the photoresist film 34 is developed.

Next, as illustrated in FIG. 13D, the inter-layer insulation film 32 isetched with the photoresist film 34 as the mask. Thus, the patterns ofholes, etc., are formed in the inter-layer insulation film 32.

Next, as illustrated in FIG. 13E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

Whether or not assist patterns are provided around the pattern 18 a forforming a hole is not explicitly described, but as illustrated in FIG.7, assist patterns 21 may be suitably formed around the pattern 18 a.FIG. 7 is a plan view of the reticle with the assist patterns formed on.

As illustrated in FIG. 7, the assist patterns 21 are formed around thepattern 18 a for forming a hole. The assist patterns are provided on thereticle as illustrated in FIG. 7, whereby the required patterns can bemore stably formed.

(Modification 1)

Then, the semiconductor device manufacturing method according toModification 1 of the present embodiment will be explained withreference to FIGS. 13A to 14B. FIGS. 14A and 14B are plan views of anaperture stop used in the semiconductor device manufacturing methodaccording to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that as illustrated in FIG. 14B,the apertures 24 b 1-24 b 4 of the second aperture atop 16 g for thesecond exposure are positioned inside the effective region of theaperture stop 16 g.

In the aperture stop 16 f illustrated in FIG. 12B, the second apertures24 a 1-24 a 4 are partially positioned outside the effective region ofthe aperture stop 16 f, but in the present modification, as illustratedin FIG. 14B, the second apertures 24 b 1-24 b 4 are arranged inside theeffective region of the aperture stop 16 g. The effective region of theaperture stop is a region which can actually function as the stop.

The second apertures 24 b 1-24 b 4 may be thus positioned inside theeffective region of the aperture stop 16 g.

Then, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 13A to 13E.FIGS. 13A to 13E are sectional views of the semiconductor device in thesteps of the semiconductor device manufacturing method according to thepresent embodiment, which illustrate the method.

The aperture stop 16 e illustrated in FIG. 14A is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20.

Then, the aperture stop 16 g illustrated in FIG. 14B is mounted on thealigner described above with reference to FIG. 1, and patterns formed onthe reticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20 (see FIG. 13B). An anti-reflection film isoften formed on the upper side or the underside of the photoresist film34 but is omitted in FIGS. 13A to 13E.

Next, as illustrated in FIG. 13C, the photoresist film 34 is developed.

Next, as illustrated in FIG. 13D, the inter-layer insulation film 32 isetched with the photoresist film 34 as the mask. Thus, the patterns ofholes, etc. are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 13E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

In the present modification as well in the semiconductor devicemanufacturing method according to the first embodiment, even with thepattern pitch set at various values, the DOF can be surely sufficient,and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming hole is not explicitly explained here, but as illustrated inFIG. 7, the assist patterns 21 may be suitably formed around the pattern18 a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be stably formed.

(Modification 2)

Then, the semiconductor device manufacturing method according toModification 2 of the present embodiment will be explained withreference to FIGS. 13A to 13E, 15A and 15B. FIGS. 15A and 15B are planviews of an aperture stop used in the semiconductor device manufacturingmethod according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that as illustrated in FIG. 15B,the second aperture stop 16 h for the second exposure further has thethird apertures 26 a 1-26 a 4 respectively between the second apertures24 a 1-24 a 4.

As illustrated in FIG. 15B, the third apertures 26 a 1-26 a 4 arepositioned respectively between the second apertures 24 a 1-24 a 4. Thethird apertures 26 a 1-26 a 4 are positioned inside the effective regionof the aperture stop 16 h.

In other words, in the present modification, the relatively smallapertures 24 a 1-24 a 4, 26 a 1-26 a 4 are formed octagonally around thering-shaped aperture 22.

As described above, the exposure may be made by using the aperture stop16 h having the relatively small apertures 24 a 1-24 a 4, 26 a 1-26 a 4thus formed octagonally around the ring-shaped aperture 22.

Then, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 13A to 13E.FIGS. 13A to 13E are sectional views of the semiconductor device in thesteps of the semiconductor device manufacturing method according to thepresent embodiment, which illustrate the method.

The aperture stop 16 e illustrated in FIG. 15A is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20. An anti-reflection film is often formed onthe upper side or the underside of the photoresist film 34 but isomitted in FIGS. 13A to 13E.

Then, the aperture stop 16 h illustrated in FIG. 15B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 13B).

Then, as illustrated in FIG. 13C, the photoresist film 34 is developed.

Next, as illustrated in FIG. 13D, the inter-layer insulation film 32 isetched with the photoresist film 34 as the mask. Thus, the patterns ofholes, etc., are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 13E, the photoresist film 34 is released.

Thus, the semiconductor device of the present modification ismanufactured.

In the present modification as well as in the semiconductor devicemanufacturing method according to the first embodiment, even with thepattern pitch set at various values, the DOF can be surely sufficient,and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming hole is not explicitly explained here, but as illustrated inFIG. 7, the assist patterns 21 may be suitably formed around the pattern18 a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be stably formed.

(Modification 3)

Next, the semiconductor device manufacturing method according toModification 3 of the present embodiment will be explained withreference to FIGS. 13A to 13E, 16A and 16B. FIGS. 16A and 16B are planviews of an aperture stop used in the semiconductor device manufacturingmethod according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the aperture stop 16 i usedin the second exposure has third apertures 28 a 1-28 a 4 relativelyinner formed.

When the aperture stops 16 e used in the first exposure and the secondaperture stops 16 i used in the second exposure are superimposed on eachother, the third apertures 28 a 1-28 a 4 are partially positioned in theaperture 22.

The third apertures 28 a 1-28 a 4 of the aperture stop 16 i for thesecond exposure may be positioned relatively nearer the center of theaperture stop 16 i.

Then, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 13A to 13E.FIGS. 13A to 13E are sectional views of the semiconductor device in thesteps of the semiconductor device manufacturing method according to thepresent modification, which illustrate the method.

The aperture stop 16 e illustrated in FIG. 16A is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20.

Then, the aperture stop 16 i illustrated in FIG. 16B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 13B).

Then, as illustrated in FIG. 13C, the photoresist film 34 is developed.

Then, as illustrated in FIG. 13D, the inter-layer insulation film 32 isetched with the photoresist film 34 as the mask. Thus, the patterns ofholes, etc. are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 13E, the photoresist film 34 is released.

Thus, the semiconductor device according to the present modification ismanufactured.

In the present modification as well as in the semiconductor devicemanufacturing method according to the first embodiment, even with thepattern pitch set at various values, the DOF can be surely sufficient,and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming hole is not explicitly explained here, but as illustrated inFIG. 7, the assist patterns 21 may be suitably formed around the pattern18 a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be stably formed.

(Modification 4)

Then, the semiconductor device manufacturing method according toModification 4 of the present embodiment will be explained withreference to FIGS. 13A to 13E, 17A and 17B. FIGS. 17A and 17B are planviews of an aperture stop used in the semiconductor device manufacturingmethod according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the aperture stop 16 j forthe second exposure has third apertures 30 a 1-30 a 4 formed in asmaller diameter than the second apertures 24 a 1-24 a 4.

The diameter of the third apertures 30 a 1-30 a 4 may be thus smallerthan the diameter of the second apertures 24 a 1-24 a 4.

Then, the semiconductor device manufacturing method according to thepresent modification will be explained with reference to FIGS. 13A to13E. FIGS. 13A to 13E are sectional views of the semiconductor device inthe steps of the semiconductor device manufacturing method according tothe present modification, which illustrate the method.

The aperture stop 16 e illustrated in FIG. 17A is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20.

Then, the aperture stop 16 j illustrated in FIG. 17B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 13B).

Next, as illustrated in FIG. 13C, the photoresist film 34 is developed.

Next, as illustrated in FIG. 13D, the inter-layer insulation film 32 isetched with the photoresist film 34 as the mask. Thus, the patterns, asof holes, etc., are formed in the photoresist film 32.

Then, as illustrated in FIG. 13E, the photoresist film 32 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

In the present modification as well as the semiconductor devicemanufacturing method according to the second embodiment, even with thepattern pitch set at various pitches, the DOF can be surely sufficient,and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming hole is not explicitly explained here, but as illustrated inFIG. 7, the assist patterns 21 may be suitably formed around the pattern18 a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be stably formed.

A Third Embodiment

According to the semiconductor device manufacturing method according tothe first and the second embodiments, even with the pattern pitch set atvarious values, the DOF can be surely sufficient, and patterns can bestably transferred.

FIG. 22 is a plan view of a reticle having patterns arranged in a squarelattice. In FIG. 22, d1 represents a pitch between patterns 18 aneighboring each other, i.e., a space size.

FIG. 23 is a graph of the relationship between the space size d1 ofpatterns arranged in a square lattice to be transferred, and the DOF. InFIG. 23, the space size d1 is taken on the horizontal axis, and on thevertical axis, the normalized DOF is taken. The DOF in FIG. 23 is thevalues given with the exposure latitude being set at 4%. In FIG. 23, the● marks indicate the DOF given by the exposure with the conventionalannular illumination stop 116 illustrated in FIG. 18. In FIG. 23, the ◯marks indicate the DOF given by the exposure with the usual aperturestop 124 illustrated in FIG. 24. FIG. 24 is a plan view of the usualaperture stop. As illustrated in FIG. 24, a relatively large circularaperture 126 is formed in the aperture stop 124. In FIG. 23, the □ marksindicate the DOF given by the exposure with the aperture stop 16illustrated in FIG. 2, i.e., the aperture stop 16 of the firstembodiment.

As seen in comparing the ●-marked plots, the ◯-marked plots and the□-marked plots with one another, when the exposure is made with theaperture stop 16 illustrated in FIG. 2, even with the space size d1 setat various values, the DOF can be surely sufficient.

However, the inventors of the present application made earnest studiesand have found that when the exposure is made with the aperture stop 16illustrated in FIG. 2, with the patterns 18 a arranged oblique to thesides of the reticle 18, the DOF cannot be often surely sufficient.

FIG. 25 is a plan view of the reticle having the patterns arrangedoblique. In FIG. 25, the patterns are arranged at 45 degrees to thesides of the reticle 18. In FIG. 25, d2 is a pitch 18 a of the patternsneighboring each other, i.e., the space size.

FIG. 26 is a graph of the relationship between the space size d2 and theDOF in transferring the patterns arrange oblique. In FIG. 26, the spacesize d2 is taken on the horizontal axis, and on the vertical axis, thenormalized DOF is taken. In FIG. 26, the DOF is the value given with theexposure latitude being 4%. In FIG. 26, the ● marks indicate the DOFgiven by the exposure with the conventional annular illumination stop116 illustrated in FIG. 18. In FIG. 26, the ◯ marks indicate the DOFgiven by the exposure suing the usual aperture stop 124 illustrated inFIG. 24. In FIG. 26, the □ marks indicate the DOF given by the exposurewith the aperture stop 16 illustrated in FIG. 2, i.e., the aperture stop16 of the first embodiment.

As see in comparing the ●-marked plots, the ◯-marked plots and the□-marked plots with one another, when the patterns arranged oblique aretransferred by using the aperture stop 16 illustrated in FIG. 2, the DOFcannot be always surely sufficient.

In transferring the patterns arrange oblique by using the aperture stop16 illustrated in FIG. 2, the DOF cannot be sufficient, because thesecond apertures 24 b 1-24 b 4 arranged respectively at 45 degrees, 135degrees, 225 degrees and 315 degrees to the center of the aperture stop16 will be advantageous to transfer the patterns arranged in a squarelattice but will be disadvantageous to transfer the patterns arrangedoblique. The second apertures 24 b 1-24 b 4 which are temporarilyarranged at 0 degree, 90 degrees, 180 degrees and 270 degrees to thecenter of the aperture stop 16 are advantageous to transfer the patternsarranged oblique but disadvantageous to transfer the patterns arrangedin a square lattice.

The inventors of the present application made earnest studies and haveobtained the idea that, as illustrated in FIG. 27, the third ring-shapedaperture 36 is further formed outside the first ring-shaped aperture 22.The third ring-shaped aperture 36 formed outside the first ring-shapedaperture 22 is not oriented in a specific direction, as are the secondapertures 24 b 1-24 b 4 and can contribute to transferring the patternsarranged in various direction with a relatively high resolution. Thus,the patterns are transferred with the aperture stop 16 k having thethird ring-shaped aperture 36 further formed around the firstring-shaped aperture 22, whereby, even with the patterns 18 a forforming holes arranged in various directions, the DOF can be surelysufficient, and the patterns can be stably transferred.

The semiconductor device manufacturing method according to the thirdembodiment of the present invention will be explained with reference toFIGS. 6A to 6E and 27. FIG. 27 is a plan view of an aperture stop usedin the semiconductor device manufacturing method according to thepresent embodiment. The same members of the present embodiment as thoseof the semiconductor device manufacturing method according to the firstembodiment or the second embodiment illustrated in FIGS. 1 to 17B arerepresented by the same reference numbers not to repeat or to simplifytheir explanation.

As illustrated in FIG. 27, the aperture stop 16 k used in the presentembodiment has the first ring-shaped aperture 22 formed at the center,the third ring-shaped aperture 36 formed around the first aperture 22,and a plurality of the second apertures 24 b 1-24 b 4 formed around thethird aperture 36.

The inner sigma σ_(in(2)) of the third aperture 36 is set larger thanthe outer sigma σ_(out(1)) of the first aperture 22. In other words, theinner diameter of the third aperture 36 is set larger than the outerdiameter of the first aperture 22.

The second apertures 24 b 1-24 b 4 are arranged inside the effectiveregion of the aperture stop 16 k.

The respective sizes of the aperture stop 16 k are exemplified below.These sizes are normalized values with the outer diameter of theeffective region of the aperture stop 16 k being 1.0.

The size of the outer sigma σ_(out(1)) of the first aperture 22 is,e.g., 0.4-0.5. The size of the inner sigma σ_(in(1)) of the firstaperture 22 is, e.g., 0.2-0.3.

The size of the outer sigma σ_(out(2)) of the third aperture 36 is,e.g., 0.55-0.70. The inner sigma σ_(in(2)) of the third aperture 36 is,e.g., 0.75-0.90.

The distance between the center of the aperture 16 k and the centers ofthe second apertures 24 b 1-24 b 4 is, e.g., 0.8-0.9. The secondapertures 24 b 1-24 b 4 are partially positioned in the thirdring-shaped aperture 36. The apertures 24 b 1-24 b 4 are formed in,e.g., the following directions with respect to the straight line (centerline) which is a straight line parallel with one of the sides of thereticle 18 and passes the center of the aperture stop 16 k. For example,the angle formed by the line segment interconnecting the center of theaperture 16 k and the center of the aperture 24 b 1, and the center lineof the aperture stop 16 k is set at, e.g., 45 degrees. The angle formedby the line segment interconnecting the center of the aperture stop 16 kand the center of the aperture 24 b 2, and the center line of theaperture stop 16 k is set at, e.g., 135 degrees. The angle formed by theline segment interconnecting the center of the aperture stop 16 k andthe center of the aperture 24 b 3, and the center line of the aperturestop 16 k is set at, e.g., 225 degrees. The angle formed by the linesegment interconnecting the center of the aperture stop 16 k and thecenter of the aperture 24 b 4, and the center line of the aperture stop16 k is set at, e.g., 315 degrees.

Thus, the aperture stop 16 k of the present embodiment is constituted.

Next, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6E.

First, as illustrated in FIGS. 6A to 6E, a semiconductor substrate 20with an inter-layer insulation film 32, a photoresist film 34, etc.formed on is prepared.

Next, the aperture stop 16 k illustrated in FIG. 27 is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 6B).

Next, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Then, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patternsof holes, etc. are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

In FIG. 26, the ▪ marks indicate the DOF given by transferring theobliquely arranged patterns (see FIG. 25) with the aperture stop 16 k ofthe present embodiment illustrated in FIG. 27. As seen in comparing the□-marked plots with the ▪-marked plots in FIG. 26, the use of theaperture stop 16 k of the present embodiment can make the DOF sufficienteven with the patterns 18 a for forming the holes arranged oblique.

In FIG. 23, the ▪ marks indicate the DOF given by transferring thepattern arranged in a square lattice (see FIG. 22) by using the aperture16 k of the present embodiment illustrated in FIG. 27. As seen in FIG.23, the use of the aperture stop 16 k of the present embodiment can makethe DOF sufficient even when the pattern 18 a for forming holes arearranged in a square lattice.

Based on the above, the use of the aperture stop 16 k of the presentembodiment can make the DOF sufficient even when the pattern 18 a forforming holes are arranged in various directions.

As described above, according to the present embodiment, the aperturestop 16 k having the third ring-shaped aperture 36 further formed aroundthe first ring-shaped aperture 22 is used to transfer the patterns,whereby even with the patterns 18 a for forming holes arranged invarious directions, the DOF can be surely sufficient, and the patternscan be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming hole is not explicitly explained here, but as illustrated inFIG. 7, the assist patterns 21 may be suitably formed around the pattern18 a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be stably formed.

(Modification 1)

Next, the semiconductor device manufacturing method according toModification 1 of the present embodiment will be explained withreference to FIGS. 28 to 30. FIG. 28 is a plan view of an aperture stopused in the semiconductor device manufacturing method according to thepresent modification. FIG. 29 is a graph of the relationship between thespace size and the DOF given when the patterns arranged in a squarelattice are transferred. FIG. 30 is a graph of the relationship betweenthe space size and the DOF given when the patterns arranged oblique aretransferred.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the patterns aretransferred by using the aperture stop 16 l illustrated in FIG. 28. Thatis, the semiconductor device manufacturing method according to thepresent modification is characterized mainly in that the outer sigmaσ_(out(2)) of the third ring-shaped aperture 36 a and the size of theinner sigma σ_(in(2)) are smaller than those of the aperture stop 16 killustrated in FIG. 27, and the second apertures 24 b 1-24 b 4 are notpositioned in the third ring-shaped aperture 36 a.

The respective sizes of the aperture stop 16 l are as exemplified below.These sizes are values given by normalizing the outer diameter of theeffective region of the aperture stop 16 l to be 1.0.

The size of the outer sigma σ_(out(1)) of the first aperture 22 is,e.g., 0.4-0.5. The inner sigma σ_(in(1)) of the first aperture 22 is,e.g., 0.2-0.3.

The outer sigma σ_(out(2)) of the third aperture 36 a is, e.g.,0.55-0.7. The size of the inner sigma σ_(in(2)) of the third aperture 36a is, e.g., 0.75-0.90.

The distance between the center of the aperture stop 161 and the centersof the second apertures 24 b 1-24 b 4 are, e.g., 0.8-0.9. The secondapertures 24 b 1-24 b 4 are not positioned inside the third aperture 36a but are positioned outside the third ring-shaped aperture 36 a. Thatis, the second apertures 24 b 1-24 b 4 and the third ring-shapedaperture 36 a are not superimposed on each other.

Thus, the aperture stop 16 l of the present modification is constituted.

FIG. 29 is a graph of the relationship between the space size d1 and theDOF given when the patterns arranged in a square lattice aretransferred. In FIG. 29, the space size is taken on the horizontal axis,and the normalized DOF is taken on the vertical axis. In FIG. 29, theDOF is values given when the exposure latitude is 4%. In FIG. 29, the ●marks indicate the DOF given by the exposure with the conventionalannular illumination stop 116 illustrated in FIG. 18. In FIG. 29, the □marks indicate the DOF given by the exposure with the aperture stop 16illustrated in FIG. 2, i.e., the aperture stop 16 according to the firstembodiment. In FIG. 29, the ▪ marks indicate the DOF given by theexposure with the aperture stop 16 k illustrated in FIG. 27, i.e., theaperture stop 16 k of the third embodiment. In FIG. 29, the ◯ marksindicate the DOF given by the exposure with the aperture stop 16 lillustrated in FIG. 28, i.e., the aperture stop 16 l according to thepresent modification.

As seen in FIG. 29, the use of the aperture stop 16 l according to thepresent modification as well can make the DOF sufficient.

FIG. 30 is a graph of the relationship between the space size d2 and theDOF given when the patterns arrange oblique are transferred. In FIG. 30,the space size d2 is taken on the horizontal axis, and on the verticalaxis, the DOF is taken. In FIG. 30, the DOF is values given when theexposure latitude is 4%. In FIG. 30, the ● marks indicate the DOF givenby the exposure with the conventional annular illumination stop 116illustrated in FIG. 18. In FIG. 30, the □ marks indicate the DOF givenby the exposure with the aperture stop 16 illustrated in FIG. 2, i.e.,the aperture stop 16 according to the first embodiment. In FIG. 30, the▪ marks indicate the DOF given by the exposure with the aperture stop 16k illustrated in FIG. 27, i.e., the aperture stop 16 k according to thethird embodiment. In FIG. 30, the ◯ marks indicate the DOF given by theexposure with the aperture stop 16 l illustrated in FIG. 28, i.e., theaperture stop 16 l according to the present modification.

As seen in FIG. 30, the aperture stop 16 l according to the presentmodification as well can make the DOF sufficient.

As described above, in the present modification as well thesemiconductor device manufacturing method according to the thirdembodiment, even when the patterns 18 a for forming holes are arrangedin various directions, the DOF can be made sufficient, and the patternscan be stably transferred.

(Modification 2)

Next, the semiconductor device manufacturing method according toModification 2 of the present embodiment will be explained withreference to FIGS. 31 to 33. FIG. 31 is a plan view of an aperture stopused in the semiconductor device manufacturing method according to thepresent modification. FIG. 32 is a graph of the relationship between thespace size and the DOF given when the patterns arranged in a squarelattice are transferred. FIG. 33 is a graph of the relationship betweenthe space size and the DOF given when patterns arranged oblique aretransferred.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the patterns aretransferred with the aperture stop 16 m illustrated in FIG. 31. That is,the semiconductor device manufacturing method is characterized mainly inthat the outer sigma σ_(out(2)) of the third ring-shaped aperture 36 band the inner sigma σ_(in(2)) of the third ring-shaped aperture 36 b areset smaller than those of the aperture stop 16 k illustrated in FIG. 27,and the aperture stop 16 m having the second apertures 24 c 1-24 c 4positioned inside the third aperture 36 b is used to transfer thepatterns.

The respective sizes of the aperture stop 16 m are as exemplified below.These sizes are value given normalizing the outer diameter of theeffective region of the aperture stop 16 m to be 1.0.

The size of the outer sigma σ_(out(1)) of the first aperture 22 is,e.g., 0.4-0.5. The size of the inner σ_(in(1)) of the first aperture 22is, e.g., 0.2-0.3.

The size of the outer sigma σ_(out(2)) of the third aperture 36 b is,e.g., 0.85-0.95. The size of the inner σ_(in(2)) of the third aperture36 b is, e.g., 0.75-0.85.

The distance between the center of the aperture stop 16 m and thecenters of the second apertures 24 c 1-24 c 4 is, e.g., 0.55-0.70. Thesecond apertures 24 c 1-24 c 4 are positioned outside the firstring-shaped aperture 22 and inside the third ring-shaped aperture 36 b.

Thus, the aperture 16 m of the present modification is constituted.

FIG. 32 is a graph of the relationship between the space size d1 fortransferring the patterns arranged in a square lattice and the DOF. InFIG. 32, the space size d1 is taken on the horizontal axis, and on thevertical axis, the DOF is taken. In FIG. 32, the DOF is values givenwhen the exposure latitude is 4%. In FIG. 32, the ● marks indicate theDOF given when the exposure is made with the conventional annularillumination stop 116 illustrated in FIG. 18. In FIG. 32, the □ marksindicate the DOF given when the exposure is made with the aperture stop16 illustrated in FIG. 2, i.e., the aperture stop 16 according to thefirst embodiment. In FIG. 32, the ▪ marks indicate the DOF given whenthe exposure is made with the aperture stop 16 k illustrated in FIG. 27,i.e., the aperture stop 16 k according to the third embodiment. In FIG.32, the ◯ marks indicate the DOF given when the exposure is made withthe aperture stop 16 m illustrated in FIG. 31, i.e., the aperture stop16 m according to the present modification.

As seen in FIG. 32, even with the aperture stop 16 m of the presentmodification, the DOF can be made sufficient.

FIG. 33 is a graph of the relationship between the space size d2 fortransferring the patterns arranged oblique and the DOF. In FIG. 33, thespace size d2 is taken on the horizontal axis, and on the vertical axis,the normalized DOF is taken. In FIG. 33, the DOF is values given whenthe exposure latitude is 4%. In FIG. 33, the ● marks indicate the DOFgiven by the exposure with the conventional annular illumination stop116 illustrated in FIG. 18. In FIG. 33, the □ marks indicate the DOFgiven by the exposure with the aperture stop 16 illustrated in FIG. 2,i.e., the aperture stop 16 according to the first embodiment. In FIG.33, the ▪ marks indicate the DOF given by the exposure with the aperturestop 16 k illustrated in FIG. 27, i.e., the aperture stop 16 k accordingto the third embodiment. In FIG. 33, the ◯ marks indicate the DOF givenby the exposure with the aperture stop 16 m illustrated in FIG. 31,i.e., the aperture stop 16 m according to the present modification

As seen in FIG. 33, when the space size d2 is relatively small, thepresent modification can make the DOF larger than the DOF given with theaperture stop 16 illustrated in FIG. 2.

As described above, the present modification as well can surely make theDOF sufficient, and the patterns can be stably transferred.

(Modification 3)

Next, the semiconductor device manufacturing method according toModification 3 of the present embodiment will be explained withreference to FIGS. 34 to 36. FIG. 34 is a plan view of an aperture stopused in the semiconductor device manufacturing method according to thepresent modification. FIG. 35 is a graph of the relationship between thespace size for transferring the patterns arranged in a square latticeand the DOF. FIG. 36 is a graph of the relationship between the spacesize for transferring the patterns arranged oblique and the DOF.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the aperture stop 16 nillustrated in FIG. 34 is used to transfer the patterns. That is, thesemiconductor device manufacturing method according to the presentmodification is characterized mainly in that the aperture stop 16 nhaving the size of the outer sigma σ_(out(2)) and the size of the innersigma σ_(on(2)) of the third ring-shaped aperture 36 c set larger thanthose of the aperture stop 16 k illustrated in FIG. 27 and having thesecond apertures 24 c 1-24 c 4 partially positioned in the thirdring-shaped aperture 36 b is used to transfer the patterns.

The respective sizes of the aperture stop 16 n are as exemplified below.These sizes are values normalized with the outer diameter of theeffective region of the aperture stop 16 n being 1.0.

The size of the outer sigma σ_(out(1)) of the first aperture 22 is,e.g., 0.4-0.5. The size of the inner sigma σ_(in(1)) of the firstaperture 22 is, e.g., 0.2-0.3.

The size of the outer sigma σ_(out(2)) of the third aperture 36 c is,e.g., 0.8-0.9. The size of the inner sigma σ_(in(2)) of the thirdaperture 36 c is, e.g., 0.7-0.8.

The distance between the center of the aperture stop 16 n and thecenters of the second apertures 24 b 1-24 b 4 is, e.g., 0.8-0.9. Thesecond apertures 24 b 1-24 b 4 are partially positioned in the thirdring-shaped aperture 36 c. That is, the second apertures 24 b 1-24 b 4partially overlap the third ring-shaped aperture 36 c.

Thus, the aperture stop 16 n of the present modification is constituted.

FIG. 35 is a graph of the relationship between the space size d1 fortransferring the patterns arranged in a square lattice and the DOF. InFIG. 35, the space size d1 is taken on the horizontal axis, and on thevertical axis, the normalized DOF is taken. In FIG. 35, the DOF isvalues given when the exposure latitude is 4%. In FIG. 35, the ● marksindicate the DOF given by the exposure with the conventional annularillumination stop 116 illustrated in FIG. 18. In FIG. 35, the □ marksindicate the DOF given by the exposure with the aperture stop 16illustrated in FIG. 2, i.e., the exposure with the aperture stop 16according to the first embodiment. In FIG. 35, the ▪ marks indicate theDOF given by the exposure with the aperture stop 16 k illustrated inFIG. 27, i.e., the exposure with the aperture stop 16 k according to thethird embodiment. In FIG. 35, the ◯ marks indicate the DOF given by theexposure with the aperture stop 16 n illustrated in FIG. 34, i.e., theexposure with the aperture stop 16 n according to the presentmodification.

As seen in FIG. 35, even with the aperture stop 16 n according to thepresent modification, the DOF can be surely sufficient.

FIG. 36 is a graph of the relationship between the space size d2 fortransferring the patterns arrange oblique and the DOF. In FIG. 36, thespace size d2 is taken on the horizontal axis, and on the vertical axis,the normalized DOF is taken. In FIG. 36, the DOF is values given whenthe exposure latitude is 4%. In FIG. 36, the ● marks indicate the DOFgiven by the exposure with the conventional annular illumination stop116 illustrated in FIG. 18. In FIG. 36, the □ marks indicate the DOFgiven by the exposure with the aperture stop 16 illustrated in FIG. 2,i.e., the aperture stop 16 according to the first embodiment. In FIG.36, the ▪ marks indicate the DOF given by the exposure with the aperturestop 16 k illustrated in FIG. 27, i.e., the exposure with the aperturestop 16 k according to the third embodiment. In FIG. 36, the ◯ marksindicate the DOF given by the exposure with the aperture stop 16 nillustrated in FIG. 34, i.e., the exposure with the aperture stop 16 naccording to the present modification.

As seen in FIG. 36, when the space size d2 is relatively small, thepresent modification can make the DOF larger than the DOF given by theaperture stop 16 illustrated in FIG. 2.

As described above, the present modification as well can make the DOFsurely sufficiently large and can stably transfer the patterns.

(Modification 4)

Then, the semiconductor device manufacturing method according toModification 4 of the present embodiment will be explained. FIG. 37 is aplan view of an aperture stop used in the semiconductor devicemanufacturing method according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the patterns aretransferred by using an aperture stop 16 o illustrated in FIG. 37. Thatis, the semiconductor device manufacturing method according to thepresent modification is characterized mainly in that the patterns aretransferred by using the aperture 16 o having the second apertures 24 a1-24 a 6 hexagonally arranged.

As illustrated in FIG. 37, the second apertures 24 a 1-24 a 6 arehexagonally formed.

The apertures 24 b 1-24 b 6 are formed in the direction as exemplifiedbelow with the straight line (center line) parallel with one of thesides of the reticle 18 and passing the center of the aperture stop 16 oset as the reference. For example, the angle formed by the line segmentinterconnecting the center of the aperture stop 16 o and the center ofthe aperture 24 b 1, and the center line of the aperture stop 16 o isset at, e.g., 30 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 o and the center ofthe aperture 24 b 2, and the center line of the aperture stop 16 o isset at, e.g., 90 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 o and the center ofthe aperture 24 b 3, and the center line of the aperture stop 16 o isset at, e.g., 150 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 o and the center ofthe aperture 24 b 4, and the center line of the aperture stop 16 o isset at, e.g., 210 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 o and the center ofthe aperture 24 b 5, and the center line of the aperture stop 16 o isset at, e.g., 270 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 o and the center ofthe aperture 24 b 6, and the center line of the aperture stop 16 o isset at, e.g., 330 degrees.

The second apertures 24 b 1-24 b 6 are partially positioned in the thirdring-shaped aperture 36. That is, the second apertures 24 b 1-24 b 6partially overlap the third ring-shaped aperture 36.

In the present modification as well in the semiconductor devicemanufacturing method according to the third embodiment, even when thepatterns 18 a for forming holes are arranged in various directions, theDOF can be surely sufficient, and the patterns can be stablytransferred.

(Modification 5)

The semiconductor device manufacturing method according to Modification5 of the present embodiment will be explained with reference to FIG. 38.FIG. 38 is a plan view of an aperture stop used in the semiconductordevice manufacturing method according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that an aperture stop 16 pillustrated in FIG. 38 is used to transfer the patterns. That is, thesemiconductor device manufacturing method according to the presentmodification is characterized mainly in that the aperture stop 16 phaving the second apertures 24 a 1-24 a 8 octagonally formed is used totransfer the patterns.

As illustrated in FIG. 38, the second apertures 24 a 1-24 a 8 areoctagonally formed.

The apertures 24 b 1-24 b 8 are formed in the direction as exemplifiedbelow with the straight line (center line) parallel with one of thesides of the reticle 18 and passing the center of the aperture stop 16 pset as the reference. For example, the angle formed by the line segmentinterconnecting the center of the aperture stop 16 p and the center ofthe aperture 24 b 1, and the center line of the aperture stop 16 p isset at, e.g., 0 degree. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 p and the center ofthe aperture 24 b 2, and the center line of the aperture stop 16 p isset at, e.g., 45 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 p and the center ofthe aperture 24 b 3, and the center line of the aperture stop 16 p isset at, e.g., 90 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 p and the center ofthe aperture 24 b 4, and the center line of the aperture stop 16 p isset at, e.g., 135 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 p and the center ofthe aperture 24 b 5, and the center line of the aperture stop 16 p isset at, e.g., 180 degrees. The angle formed by the line segmentinterconnecting the center of the aperture stop 16 p and the center ofthe aperture 24 b 6, and the center line of the aperture stop 16 p isset at, e.g., 225 degrees. The angle formed by the line segmentinterconnecting the center of the aperture 16 p and the center of theaperture 24 b 7, and the center line of the aperture stop 16 p is setat, e.g., 270 degrees. The angle formed by the line segmentinterconnecting the center of the aperture 16 p and the center of theaperture 24 b 8, and the center line of the apertures stop 16 p is setat, e.g., 315 degrees.

The second apertures 24 b 1-24 b 8 are partially positioned in the thirdring-shaped aperture 36. That is, the second apertures 24 b 1-24 b 8partially overlap the third ring-shaped aperture 36.

In the present modification as well the semiconductor devicemanufacturing method according to the third embodiment, even when thepatterns 18 a for forming holes are arranged in various directions, theDOF can be surely sufficient, and the patterns can be stablytransferred.

(Modification 6)

Then, the semiconductor device manufacturing method according toModification 6 of the present embodiment will be explained withreference to FIG. 39. FIG. 39 is a plan view of an aperture stop used inthe semiconductor device manufacturing method according to the presentmodification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the aperture stop 16 qillustrated in FIG. 39 is sued to transfer the patterns. That is, thesemiconductor device manufacturing method according to the presentmodification is characterized mainly in that the aperture stop 16 qhaving the fourth aperture 38 further formed in the center is used totransfer the patterns.

As illustrated in FIG. 39, the aperture 38 having a smaller diameterthan the inner sigma σ_(in(1)) of the first ring-shaped aperture 22 isformed in the center of the aperture stop 16 q, i.e., inside the firstring-shaped aperture 22 a. The aperture 38 contributes to transferringpatterns isolated the other patterns, i.e., isolated patterns with arelatively high resolution.

The respective sizes of the aperture stop 16 q are as exemplified below.These sizes are normalized with the outer diameter of the effectiveregion of the apertures stop 16 q set at 1.0.

The size of the outer sigma σ_(out(1)) of the first aperture 22 a is,e.g., 0.4-0.5. The size of the inner sigma σ_(in(1)) of the firstaperture 22 a is, e.g., 0.2-0.3.

The size of the outer sigma σ_(out(2)) of the third aperture 36 d is,e.g., 0.8-0.9. The size of the inner sigma σ_(in(2)) of the thirdaperture 36 d is, e.g., 0.7-0.8.

The distance between the center of the aperture stop 16 q and thecenters of the second apertures 24 b 1-24 b 4 is, e.g., 0.8-0.9. Thesecond apertures 24 b 1-24 b 4 are partially positioned in the thirdring-shaped aperture 36 d. That is, the second apertures 24 b 1-24 b 4partially overlap the third ring-shaped aperture 36 d.

The diameter of the fourth aperture 38 is, e.g., 0.1-0.25.

Thus, the aperture stop 16 q of the present modification is thus formed.

In the present modification, because of the aperture 38 formed in thecenter of the aperture stop 16 q, even when patterns are present,isolated on the reticle, patterns can be transferred with a highresolution.

A Fourth Embodiment

The semiconductor device manufacturing method according to a fourthembodiment of the present invention will be explained with reference toFIGS. 6A to 6E and 40A to 40C. FIG. 40 is plans view of an aperture stopused in the semiconductor device manufacturing method according to thepresent embodiment. The same members of the present embodiment as thoseof the semiconductor device manufacturing method according to the firstto the third embodiments illustrated in FIGS. 1 to 39 are represented bythe same reference numbers not to repeat or to simplify theirexplanation.

The semiconductor device manufacturing method according to the presentembodiment is characterized mainly in that the first exposure is madewith the first aperture stop 16 r having the first ring-shaped aperture22 formed in, then the second exposure is made with the second aperturestop 16 s having apertures 24 b 1-24 b 4 formed in, and then the thirdexposure is made with the third aperture stop 16 t having the thirdring-shaped aperture stop 36 formed in.

FIG. 40A is a plan view of the first aperture stop 16 r having the firstring-shaped aperture 22 formed in at the center. The first aperture stop16 r used in the present embodiment has the first ring-shaped aperture22 formed in the center. The position, shape, etc. of the first aperture22 of the first aperture stop 16 r illustrated in FIG. 40A are the sameas the position, shape, etc. of the first aperture 22 of the aperturestop 16 k illustrated in FIG. 27.

FIG. 40B is a plan view of the second aperture stop 16 s having thesecond apertures 24 b 1-24 b 4 in square directions around the center.The positions, shape, etc. of the second aperture stop 16 s illustratedin FIG. 40B are the same as the position, shape, etc. of the secondapertures 24 b 1-24 b 4 of the aperture stop 16 k illustrated in FIG.27.

FIG. 40C is a plan view of the third aperture stop 16 t having the thirdring-shaped aperture 36 formed in. The position and shape of the thirdaperture 36 of the third aperture stop 16 t illustrated in FIG. 40C arethe same as the position and shape of the aperture stop 16 k illustratedin FIG. 27.

Next, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6Eand 40A to 40C.

First, as illustrated in FIG. 6A, a semiconductor substrate 20 having aninter-layer insulation film 32, a photoresist film 34, etc. formed on isprepared.

Then, the aperture stop 16 r illustrated in FIG. 40A is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20.

Next, the aperture stop 16 s illustrated in FIG. 40B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20.

Next, the aperture stop 16 t illustrated in FIG. 40C is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 6B).

Next, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Then, as illustrated in FIG. 6D, the inter-layer insulation film 32 isetched with the photoresist film 34 as the mask. Thus, the patterns ofholes, etc. are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment is fabricated.

In the semiconductor device manufacturing method according to thepresent embodiment, the patterns formed on the reticle 18 are exposedwith the first aperture stop 16 r, then exposed with the second aperturestop 16 s and exposed with the third aperture stop 16 t. The exposurewith the first aperture stop 16 r contributes to transferring patternsarranged at a medium pitch to a relatively large pitch with a relativelyhigh resolution. The exposure with the second aperture stop 16 scontributes to transferring patterns arranged at a relatively smallpitch with a relatively high resolution. The exposure with the thirdaperture stop 16 t contributes to transferring patterns arranged invarious directions with a relatively high resolution. Accordingly, thepresent embodiment as well produces the same advantageous effect as theaperture stop 16 k according to the third embodiment, and even when thepatterns 18 a for forming holes are arranged in various directions, theDOF can be surely sufficient, and the patterns can be stablytransferred.

Whether or not assist patterns are provided around the pattern 18 a forforming hole is not explicitly explained here, but as illustrated inFIG. 7, the assist patterns 21 may be suitably formed around the pattern18 a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be stably formed.

(Modification 1)

Then, the semiconductor device manufacturing method according toModification 1 of the present embodiment will be explained withreference to FIGS. 6A to 6E, 41A and 41B. FIGS. 41A and 41B are planviews of an aperture stop used in the semiconductor device manufacturingmethod according to Modification 1 of the present embodiment.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the first exposure is madewith the first aperture stop 16 u having the first ring-shaped aperture22 and the third ring-shaped aperture 36 formed in, and then the secondexposure is made with the second aperture stop 16 v having the secondapertures 24 b 1-24 b 4 formed in.

FIG. 41A is a plan view of the first aperture stop 16 u having the firstring-shaped aperture and the third ring-shaped aperture formed in. Thefirst aperture 16 u used in the present modification has the firstring-shaped aperture 22 formed in the center and the third ring-shapedaperture 36 formed around the first aperture 22. The positions, shapes,etc. of the first aperture 22 and the third aperture 36 of the firstaperture stop 16 u illustrated in FIG. 41A are the same as thepositions, shapes, etc. of the first aperture 22 and the third aperture36 of the aperture stop 16 k illustrated in FIG. 27.

FIG. 41B is a plan view of the second aperture stop 16 v having thesecond apertures 24 b 1-24 b 4 in square directions around the center.The positions, shape, etc. of the second apertures 24 b 1-24 b 4 of thesecond aperture stop 16 v illustrated in FIG. 41B are the same as thepositions, shape, etc. of the second apertures 24 b 1-24 b 4 of theaperture stop 16 k illustrated in FIG. 27.

As described above, it is possible that the first exposure is made withthe first aperture stop 16 u having the first ring-shaped aperture 22and the third ring-shaped aperture 36 formed in, and then the secondexposure is made with the second aperture stop 16 v having the apertures24 b 1-24 b 4 formed in.

Next, the semiconductor device manufacturing method according to thepresent modification will be explained with reference to FIGS. 6A to 6E.

The aperture stop 16 u illustrated in FIG. 41A is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20.

The aperture stop 16 v illustrated in FIG. 41B is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20 (see FIG. 6B).

Then, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Then, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patternsof holes, etc. are formed in the inter-layer insulation film 32.

Next, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device of the present modification ismanufactured.

The present modification can produce the same advantageous effects asthe third embodiment, in which the aperture stop 16 k is used, and evenwhen the patterns 18 a for forming holes are arranged in variousdirections, the DOF can be surely sufficient, and the patterns can bestably transferred.

(Modification 2)

Then, the semiconductor device manufacturing method according toModification 2 of the present embodiment will be explained withreference to FIGS. 6A to 6E, 42A and 42B. FIGS. 42A and 42B are planviews of the aperture stop used in the semiconductor devicemanufacturing method according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the first exposure is madewith the first aperture stop 16 w having the first ring-shaped aperture22 formed in, and the second exposure is made with the second aperturestop 16 x having the second apertures 24 b 1-24 b 4 formed in and thethird ring-shaped aperture 36 formed in.

FIG. 42A is a plan view of the first aperture stop 16 w having the firstring-shaped aperture 22 formed in. The first aperture stop 16 w used inthe present modification has the first ring-shaped aperture 22 in thecenter. The position, shape, etc. of the first aperture 22 of the firstaperture stop 16 w illustrated in FIG. 42A are the same as the position,shape, etc. of the first aperture 22 of the aperture stop 16 killustrated in FIG. 27.

FIG. 42B is a plan view of the second aperture 16 x having the thirdring-shaped aperture 36 formed in and the second apertures 24 b 1-24 b 4formed in square directions around the third aperture 36. The positions,shapes, etc. of the second apertures 24 b 1-24 b 4 and the thirdaperture 36 of the second aperture stop 16 x illustrated in FIG. 42B arethe same as the positions, shape, etc. of the second apertures 24 b 1-24b 4 and the third aperture 36 of the aperture stop 16 k illustrated inFIG. 27.

As described above, it is possible that the first exposure is made withthe first aperture stop 16 w having the first ring-shaped aperture 22formed in, and then the second exposure is made with the second aperturestop 16 x having the apertures 24 b 1-24 b 4 and the third aperture 36formed in.

Then, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6E.

The aperture stop 16 w illustrated in FIG. 42A is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20.

Then, the aperture stop 16 x illustrated in FIG. 42B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor device (see FIG. 6B).

Then, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Next, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patternsof holes, etc. are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

The present modification can produce the same advantageous effects asthe third embodiment, in which the exposure is made with the aperturestop 16 k, and even when the patterns 18 a for forming holes arearranged n various directions, the DOF can be surely sufficient, ad thepatterns can be stably transferred.

(Modification 3)

Next, the semiconductor device manufacturing method according toModification 3 of the present embodiment will be explained withreference to FIGS. 6A to 6E, 43A and 43B. FIGS. 43A and 43B are planviews of an aperture stop used in the semiconductor device manufacturingmethod according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the first exposure is madewith the first aperture stop 16 y having the first aperture 22 and thesecond apertures 24 b 1-24 b 4 formed in, and the second exposure ismade with the second aperture stop 16 z having the third aperture 36formed in.

FIG. 43A is a plan view of the first aperture stop 16 y having the firstaperture 22 and the second apertures 24 b 1-24 b 4 formed in. The firstaperture 16 y used in the present embodiment has the first ring-shapedaperture 22 formed in the center and the second apertures 124 b 1-24 b 4arranged in square directions around the center. The positions, shapes,etc. of the first aperture 22 and the second apertures 24 b 1-24 b 4 ofthe first aperture stop 16 y illustrated in FIG. 43A are the same as thepositions, shapes, etc. of the first aperture 22 and the secondapertures 24 b 1-24 b 4 of the aperture stop 16 k illustrated in FIG.27.

FIG. 43B is a plan view of the second aperture stop 16 z having thethird ring-shaped aperture 36 formed in. The position and shape, etc. ofthe third aperture 36 of the second aperture stop 16 z illustrated inFIG. 43B are the same as the position, shape, etc. of the third aperture36 of the aperture stop 16 k illustrated in FIG. 27.

As described above, it is possible that the first exposure is made withthe first aperture stop 16 y having the first aperture 22 and the secondapertures 24 b 1-24 b 4 formed in, and then the second exposure is madewith the second aperture stop 16 z having the third aperture 36 formedin.

Next, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6E.

The aperture stop 16 w illustrated in FIG. 43A is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20.

Then, the aperture stop 16 x illustrated in FIG. 43B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 6B).

Next, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Next, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patternsof holes, etc. are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

The present modification can produce the same advantageous effects asthe third embodiment, in which the exposure is made with the aperturestop 16 k, and even when the patterns 18 a for forming holes arearranged in various directions, the DOF can be surely sufficient, andthe patterns can be stably transferred.

A Fifth Embodiment

The semiconductor device manufacturing method according to a fifthembodiment of the present invention will be explained with reference toFIGS. 6A to 6E and 44. FIG. 44 is a plan view of an aperture stop usedin the semiconductor device manufacturing method used in the presentembodiment. The same members of the present embodiment as those of thesemiconductor device manufacturing method according to the first to thefourth embodiments illustrated in FIGS. 1 to 43B are represented by thesame reference numbers not to repeat or to simplify their explanation.

The semiconductor device manufacturing method according to the presentembodiment is characterized mainly in that an aperture stop 40illustrated in FIG. 44 is used to transfer the patterns. That is, thesemiconductor device manufacturing method according to the presentembodiment is characterized mainly in that the aperture stop 40 havingthe first circular aperture 38 formed in the center, the secondring-shaped aperture 22 b formed around the first aperture 38 and thethird ring-shaped aperture 36 e formed around the second ring-shapedaperture 22 b is used to transfer the patterns.

As illustrated in FIG. 44, the first circular aperture 38 is formed inthe center of the aperture stop 40.

Around the first aperture 38, the second ring-shaped aperture 22 b isformed, surrounding the first aperture 38. The inner sigma σ_(in(1)) ofthe second aperture 22 b is set larger than the diameter of the firstaperture 38. In other words, the inner diameter of the second aperture22 b is set larger than the outer diameter of the first aperture 38.

Around the second aperture 22 b, the third ring-shaped aperture 36 e isformed, surrounding the second aperture 22 b. The inner sigma σ_(in(2))of the third aperture 36 e is set larger than the outer sigma σ_(out(1))of the second aperture 22 b. In other words, the inner diameter of thethird aperture 36 e is set larger than the outer diameter of the secondaperture 22 b.

The respective sizes of the aperture stop 40 are as exemplified below.These sizes are normalized values with the outer diameter of theeffective region of the aperture stop 40 set at 1.0.

The diameter of the first aperture 38 is, e.g., 0.1-0.25.

The outer sigma σ_(out(1)) of the second aperture 22 b is, e.g.,0.4-0.5. The inner sigma σ_(in(1)) of the second aperture 38 is, e.g.,0.2-0.3.

The outer sigma σ_(out(2)) of the third aperture 36 e is, e.g.,0.8-0.95. The inner sigma σ_(in(2)) of the third aperture 36 e is, e.g.,0.7-0.8.

Thus, the aperture stop 40 of the present embodiment is constituted.

Next, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6E.

First, as illustrated in FIG. 6A, a semiconductor substrate 20 having aninter-layer insulation film 32, a photoresist film 34, etc. formed on isprepared.

Then, the aperture stop 40 illustrated in FIG. 44 is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 6B).

Then, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Then, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patternsof holes, etc. are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

As described above, in the semiconductor device manufacturing methodaccording to the present embodiment, the aperture stop 40 having thefirst circular aperture 38 formed in the center, the second ring-shapedaperture 22 b formed around the first aperture 38 and the thirdring-shaped aperture 36 e formed around the second ring-shaped aperture22 b is used to transfer the patterns. The first aperture 38 contributesto transferring patterns isolated from the other patterns, i.e.,isolated patterns with a relatively high resolution. The second aperture22 b contributes to transferring patterns arranged at a medium pitch toa relatively large pitch with a relatively high resolution. The thirdaperture 36 e contributes to transferring the patterns arranged at arelatively small pitch with a relatively high resolution. The thirdaperture 36 e contributes also to transferring with a relatively highresolution the pattern arranged in various directions. Thus, accordingto the present embodiment, even when the patterns 18 a for forming holesare set at various pitch values and in various directions, the DOF canbe surely sufficient, and the patterns can be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming hole is not explicitly explained here, but as illustrated inFIG. 7, the assist patterns 21 may be suitably formed around the pattern18 a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be stably formed.

A Sixth Embodiment

The semiconductor manufacturing method according to a sixth embodimentof the present invention will be explained with reference to FIGS. 6A to6E and 45A to 45C. FIG. 45A to 45C are plan views of aperture stops usedin the semiconductor device manufacturing method according to thepresent embodiment. The same members of the present embodiment as thoseof the semiconductor device manufacturing method according to the firstto the fifth embodiments illustrated in FIGS. 1 to 44 are represented bythe same reference numbers not to repeat or to simplify theirexplanation.

The semiconductor device manufacturing method according to the presentembodiment is characterized mainly in that the first exposure is madewith the first aperture stop 40 r having the first circular aperture 38formed in, then the second exposure is made with the second aperturestop 40 b having the second ring-shaped aperture 22 b formed in, andnext the third exposure is made with the third aperture stop 40 c havingthe third ring-shaped aperture 36 e.

FIG. 45A is a plan view of the first aperture stop 40 a having the firstcircular aperture 38 formed in the center. The first aperture stop 40 aused in the present embodiment has the first circular aperture 38 formedin the center. The position, shape, etc. of the first aperture 38 of thefirst aperture stop 40 a illustrated in FIG. 45A are the same as theposition, shape, etc. of the first aperture 38 of the aperture stop 40illustrated in FIG. 44.

FIG. 45B is a plan view of the second aperture stop 40 b having thesecond ring-shaped aperture 22 b formed in. The position, shape, etc. ofthe second aperture 22 b of the second aperture stop 40 b illustrated inFIG. 45B are the same as the position, shape, etc. of the secondaperture 22 b of the aperture stop 40 illustrated in FIG. 44.

FIG. 45C is a plan view of the third aperture stop 40 c having the thirdring-shaped aperture 36 e formed in. The position, shape, etc. of thethird aperture 36 e of the third aperture stop 40 c illustrated in FIG.45C are the same as the position, shape, etc. of the third aperture 36 eof the aperture stop 40 illustrated in FIG. 44.

Next, the semiconductor device according to the present embodiment willbe explained with reference to FIGS. 6A to 6E and 45A to 45C.

First, as illustrated in FIG. 6A, a semiconductor substrate 20 having aninter-layer insulation film 32, a photoresist film 34, etc. formed on isprepared.

Next, the aperture stop 40 a illustrated in FIG. 45A is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20.

Then, the aperture stop 40 b illustrated in FIG. 45B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20.

Next, the aperture stop 40 c illustrated in FIG. 45C is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (se FIG. 6B).

Next, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Next, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patterns,as of holes, etc., are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

As described above, in the semiconductor device manufacturing methodaccording to the present embodiment, the patterns formed on the reticle18 are exposed with the first aperture stop 40 a, then exposed with thesecond aperture stop 40 b, and then exposed with the third aperture stop40 c. The exposure with the first aperture stop 40 a contributes totransferring the isolated pattern with a relatively high resolution. Theexposure with the second aperture stop 40 b contributes to transferringthe patterns arranged at a medium pitch to a relatively large pitch witha relatively high resolution. The exposure with the third aperture stop40 c contributes to transferring the patterns arranged in variousdirections with a relatively high resolution. Thus, the presentembodiment can produce the same advantageous effects as the exposurewith the aperture stop 40 according to the fifth embodiment. That is,according to the present embodiment, even when the patterns 18 a forforming holes are arrange at various pitch values and are arranged invarious directions, the DOF can be surely sufficient, and the patternscan be stably transferred.

Whether or not assist patterns are provided around the pattern 18 a forforming hole is not explicitly explained here, but as illustrated inFIG. 7, the assist patterns 21 may be suitably formed around the pattern18 a. The assist patterns are provided on the reticle as illustrated inFIG. 7, whereby the required patterns can be stably formed.

(Modification 1)

Then, the semiconductor device manufacturing method according toModification 1 of the present embodiment will be explained withreference to FIGS. 6A to 6E, 46A and 46B. FIGS. 46A and 46B are planviews of an aperture stop used in the semiconductor device manufacturingmethod according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the first exposure is madewith the first aperture stop 40 d having the first aperture 38 and thesecond aperture 22 b formed in, and then the second exposure is madewith the second aperture stop 40 e having the third aperture 36 e formedin.

FIG. 46A is a plan view of the first aperture stop 40 d having the firstaperture 38 and the second aperture 22 b formed in. The first aperturestop 40 d has the first aperture 38 formed in the center, and the secondring-shaped aperture 22 b formed around the first aperture 38. Thepositions, shapes, etc. of the first aperture 38 and the second aperture22 b of the first aperture stop 40 d illustrated in FIG. 46A are thesame as the positions, shapes, etc. of the first aperture 38 and thesecond aperture 22 b of the aperture stop 40 illustrated in FIG. 44.

FIG. 46B is a plan view of the second aperture 40 e having the thirdaperture 36 e formed in. The shape, position, etc. of the third aperture36 e of the second aperture stop 40 e illustrated in FIG. 46B are thesame as the position, shape, etc. of the third aperture 36 e of theaperture stop 40 illustrated in FIG. 44.

Then, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6E.

Next, the aperture stop 40 d illustrated in FIG. 46A is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20.

Next, the aperture stop 40 e illustrated in FIG. 46B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 6B).

Next, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Next, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patterns,as of holes, etc., are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device according to the present modification ismanufactured.

As described above, it is possible that the first exposure is made withthe first aperture stop 40 a having the first aperture 38 and the secondaperture 22 b formed in, and the second exposure is made with the secondaperture stop 40 e having the third aperture 36 e formed in.

The present modification can produce the same advantageous effects asthe fifth embodiment, in which the aperture stop 40 is used. In thepresent modification, even when the patterns 18 a for forming holes areset at various pitch values and in various directions, the DOF can besurely sufficient, and the patterns can be stably transferred.

(Modification 2)

Then, the semiconductor device manufacturing method according toModification 2 of the present embodiment will be explained withreference to FIGS. 6A to 6E, 47A and 47B. FIGS. 47A and 47B are planviews of an aperture stop used in the semiconductor device manufacturingmethod according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the first exposure is madewith the first aperture stop 40 f having the first aperture 38 f formedin, and then, the second exposure is made with the second aperture stop40 g having the second aperture 22 b and the third aperture 36 e formedin.

FIG. 47A is a plan view of the first aperture stop 40 f having the firstaperture 38 formed in. The first aperture stop 40 f has the firstaperture 38 formed in the center. The position, shape, etc. of the firstaperture 38 of the first aperture stop 40 f illustrated in FIG. 47A arethe same as the position, shape, etc. of the first aperture 38 of theaperture stop 40 illustrated in FIG. 44A.

FIG. 47B is a plan view of the second aperture stop 40 g having thesecond aperture 22 b and the third aperture 36 e formed in. Thepositions, shapes, etc. of the second aperture 22 b and the thirdaperture 36 e of the second aperture stop 40 g illustrated in FIG. 47Bare the same as the positions, shapes, etc. of the second aperture 22 band the third aperture 36 e of the aperture stop 40 illustrated in FIG.44.

Then, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6E.

The aperture stop 40 f illustrated in FIG. 47A is mounted on the alignerdescribed above with reference to FIG. 1, and the patterns formed on thereticle 18 are transferred to the photoresist film 34 on thesemiconductor substrate 20.

Next, the aperture stop 40 g illustrated in FIG. 47B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 6B).

Then, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Then, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patterns,as of holes, etc., are formed in the inter-layer insulation film 32.

Next, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device of the present embodiment ismanufactured.

As described above, it is possible that the first exposure is made withthe first aperture stop 40 f having the first aperture 38 formed in, andthe second exposure is made with the second aperture stop 40 g havingthe second aperture 22 b and the third aperture 36 e formed in.

The present modification can produce the same advantageous effects asthe fifth embodiment, in which the exposure is made with the aperturestop 40. Thus, in the present modification, even when the patterns 18 afor forming holes are formed at various pitch value and in variousdirections, the DOF can be surely sufficient, and the patterns can bestably transferred.

(Modification 3)

Then, the semiconductor device manufacturing method according toModification 3 of the present embodiment will be explained withreference to FIGS. 6A to 6E, 48A and 48B. FIGS. 48A and 48B are planviews of an aperture stop used in the semiconductor device manufacturingmethod according to the present modification.

The semiconductor device manufacturing method according to the presentmodification is characterized mainly in that the first exposure is madewith the first aperture stop 40 h having the first aperture 38 and thethird aperture 36 e formed in, and then, the second exposure is madewith the second aperture stop 40 i having the second aperture 22 bformed in.

FIG. 48A is a plan view of the first aperture stop 40 h having the firstaperture 38 and the third aperture 36 e formed in. The first aperturestop 40 h has the first aperture 38 and the third aperture 36 e formedin. The positions, shapes, etc. of the first aperture 38 and the thirdaperture 36 e of the first aperture stop 40 h illustrated in FIG. 48Aare the same as the positions, shapes, etc. of the first aperture 38 andthe third aperture 36 e of the aperture stop 40 illustrated in FIG. 44.

FIG. 48B is a plan view of the second aperture stop 40 i having thesecond aperture 22 b formed in. The position, shape, etc. of the secondaperture 22 b of the second aperture 40 i illustrated in FIG. 48B arethe same as the position, shape, etc. of the second aperture 22 b of thesecond aperture stop 40 illustrated in FIG. 44.

Next, the semiconductor device manufacturing method according to thepresent embodiment will be explained with reference to FIGS. 6A to 6E.

Next, the aperture stop 40 h illustrated in FIG. 47A is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20.

Then, the aperture stop 40 i illustrated in FIG. 47B is mounted on thealigner described above with reference to FIG. 1, and the patternsformed on the reticle 18 are transferred to the photoresist film 34 onthe semiconductor substrate 20 (see FIG. 6B).

Next, as illustrated in FIG. 6C, the photoresist film 34 is developed.

Then, as illustrated in FIG. 6D, with the photoresist film 34 as themask, the inter-layer insulation film 32 is etched. Thus, the patterns,as of holes, etc., are formed in the inter-layer insulation film 32.

Then, as illustrated in FIG. 6E, the photoresist film 34 is released.

Thus, the semiconductor device according to the present modification ismanufactured.

As described above, it is possible that the first exposure is made withthe first aperture stop 40 h having the first aperture 38 and the thirdaperture 36 e formed in, and the second exposure is made with the secondaperture stop 40 i having the second aperture 22 b formed in.

The present modification can produce the same advantageous effects asthe fifth embodiment, in which the aperture stop 40 is used. Thus, inthe present modification, even when the patterns 18 a are formed atvarious pitch values and in various directions, the DOF can be surelysufficient, and the patterns can be stably transferred.

Modified Embodiments

The present invention is not limited to the above-described embodimentsand can cover other various modifications.

For example, in the second embodiment, the first exposure is made withthe aperture stop 16 e illustrated in FIG. 12A, and the second exposureis made with the aperture stop 16 f illustrated in FIG. 12B. However, itis possible that the aperture stop 16 f illustrated in FIG. 12B is usedfor the first exposure, and the aperture stop 16 e illustrated in FIG.12A is used for the second exposure.

In Modification 1 of the second embodiment, the first exposure is madewith the aperture stop 16 e illustrated in FIG. 14A, and the secondexposure is made with the aperture stop 16 g illustrated in FIG. 14B.However, it is possible that the aperture stop 16 g illustrated in FIG.14B is used for the first exposure, and the aperture stop 16 eillustrated in FIG. 14A is used for the second exposure.

In Modification 2 of the second embodiment, the first exposure is madewith the aperture stop 16 e illustrated in FIG. 15A, and the secondexposure is made with the aperture stop 16 h illustrated in FIG. 15B.However, it is possible that the aperture stop 16 h illustrated in FIG.15B may be used for the first exposure, and the aperture stop 16 eillustrated in FIG. 15A may be used for the second exposure.

In Modification 3 of the second embodiment, the first exposure is madewith the aperture stop 16 e illustrated in FIG. 16A, and the secondexposure is made with the aperture stop 16 i illustrated in FIG. 16B.However, it is possible that the aperture stop 16 i illustrated in FIG.16B is used for the first exposure, and the aperture stop 16 eillustrated in FIG. 16A is used for the second exposure.

In Modification 4 of the second embodiment, the first exposure is madewith the aperture stop 16 e illustrated in FIG. 17A, and the secondexposure is made with the aperture stop 16 j illustrated in FIG. 17B.However, it is possible that the aperture stop 16 j illustrated in FIG.17B is used for the first exposure, and the aperture stop 16 eillustrated in FIG. 17A is used for the second exposure.

In the fourth embodiment, the first exposure is made with the aperturestop 16 r illustrated in FIG. 40A, the second exposure is made with theaperture stop 16 s illustrated in FIG. 40B, and the third exposure ismade with the aperture stop 16 t illustrated in FIG. 40C. However, it ispossible that the aperture stop 16 r illustrated in FIG. 40A is used forthe first exposure, the aperture stop 16 t illustrated in FIG. 40C isused for the second exposure, and the aperture stop 16 s illustrated inFIG. 40B is used for the third exposure. It is possible that theaperture stop 16 s illustrated in FIG. 40B is used for the firstexposure, the aperture stop 16 r illustrated in FIG. 40A is used for thesecond exposure, and the aperture stop 16 t illustrated in FIG. 40C isused for the third exposure. It is possible that the aperture stop 16 sillustrated in FIG. 40B is used for the first exposure, the aperturestop 16 t illustrated in FIG. 40C is used for the second exposure, andthe aperture stop 16 r illustrated in FIG. 40A is used for the thirdexposure. It is possible that the aperture stop 16 t illustrated in FIG.40C is used for the first exposure, the aperture stop 16 r illustratedin FIG. 40A is used for the second exposure, and the aperture stop 16 sillustrated in FIG. 40B is used for the third exposure. It is possiblethat the aperture stop 16 t illustrated in FIG. 40C is used for thefirst exposure, the aperture stop 16 s illustrated in FIG. 40B is usedfor the second exposure, and the aperture stop 16 r illustrated in FIG.40A is used for the third exposure.

In the fourth embodiment, the aperture stop 16 r has the same aperture22 as the aperture 22 of the aperture stop 16 k (see FIG. 27) formed in,the aperture stop 16 s has the same apertures 24 b 1-24 b 4 as theapertures 24 b 1-24 b 4 of the aperture stop 16 k formed in, theaperture stop 16 t has the same aperture 36 as the aperture 36 of theaperture stop 16 k formed in. However, it is possible that the sameaperture 22 as the aperture 22 of the aperture stop 16 l (see FIG. 28)is formed in the aperture stop 16 r, the same apertures 24 b 1-24 b 4 asthe apertures 24 b 1-24 b 4 of the aperture stop 16 l are formed in theaperture stop 16 s, and the same aperture 36 a as the aperture 36 a ofthe aperture stop 16 l is formed in the aperture stop 16 t. It ispossible that the same aperture 22 as the aperture 22 of the aperturestop 16 m (see FIG. 31) is formed in the aperture stop 16 r, the sameapertures 24 c 1-24 c 4 as the apertures 24 c 1-24 c 4 of the aperturestop 16 m are formed in the aperture stop 16 s, and the same aperture 36b as the aperture 36 b of the aperture stop 16 m is formed in theaperture stop 16 t. It is possible that the same aperture 22 as theaperture 22 of the aperture stop 16 n (see FIG. 34) is formed in theaperture stop 16 r, the same apertures 24 b 1-24 b 4 as the apertures 24b 1-24 b 4 of the aperture stop 16 n are formed in the aperture stop 16s, and the same aperture 36 c as the aperture 36 c of the aperture stop16 n is formed in the aperture stop 16 t. It is possible that the sameaperture 22 as the aperture 22 of the aperture stop 16 o (see FIG. 37)is formed in the aperture stop 16 r, the same apertures 24 b 1-24 b 6 asthe apertures 24 b 1-24 b 6 of the aperture stop 16 o are formed in theaperture stop 16 s, and the same aperture 36 as the aperture 36 of theaperture stop 16 o is formed in the aperture stop 16 t. It is possiblethat the same aperture 22 as the aperture 22 of the aperture stop 16 p(see FIG. 38) is formed in the aperture stop 16 r, the same apertures 24b 1-24 b 8 as the apertures 24 b 1-24 b 8 of the aperture stop 16 p areformed in the aperture stop 16 p, and the same aperture 36 as theaperture 36 of the aperture stop 16 p is formed in the aperture stop 16t.

In Modification 1 of the fourth embodiment, the first exposure is madewith the aperture stop 16 u illustrated in FIG. 41A, the second exposureis made with the aperture stop 16 v illustrated in FIG. 41B. However, itis possible that the aperture 16 v illustrated in FIG. 41B is used forthe first exposure, and the aperture 16 u illustrated in FIG. 41A isused for the second exposure.

In Modification 1 of the fourth embodiment, the same apertures 22, 36 asthe apertures 22, 36 of the aperture stop 16 k (see FIG. 27) are formedin the aperture stop 16 u, and the same apertures 24 b 1-24 b 4 as theapertures 24 b 1-24 b 4 of the aperture stop 16 k are formed in theaperture stop 16 v. However, it is possible that the same apertures 22,36 a as the apertures 22, 36 a of the aperture stop 16 l (see FIG. 28)are formed in the aperture stop 16 u, and the same apertures 24 b 1-24 b4 as the apertures 24 b 1-24 b 4 of the aperture stop 16 l are formed inthe aperture stop 16 v. It is possible that the same apertures 22, 36 bas the apertures 22, 36 b of the aperture stop 16 m (see FIG. 31) areformed in the aperture stop 16 u, and the same apertures 24 c 1-24 c 4as the apertures 24 c 1-24 c 4 of the aperture stop 16 m are formed inthe aperture stop 16 v. It is possible that the same apertures 22, 36 cas the apertures 22, 36 c of the aperture stop 16 n (see FIG. 34) areformed in the aperture stop 16 u, and the same apertures 24 b 1-24 b 4as the apertures 24 b 1-24 b 4 of the aperture stop 16 n are formed inthe aperture stop 16 v. It is possible that the same apertures 22, 36 asthe apertures 22, 36 of the aperture stop 16 o (see FIG. 37) are formedin the aperture stop 16 u, and the same apertures 24 b 1-24 b 6 as theapertures 24 b 1-24 b 6 of the aperture stop 16 o are formed in theaperture stop 16 v. It is possible that the same apertures 22, 36 as theapertures 22, 36 of the aperture stop 16 p (see FIG. 38) are formed inthe aperture stop 16 u, and the same apertures 24 b 1-24 b 8 as theapertures 24 b 1-24 b 8 of the aperture stop 16 p are formed in theaperture stop 16 v.

In Modification 2 of the fourth embodiment, the first exposure is madewith the aperture stop 16 w illustrated in FIG. 42A, and the secondexposure is made with the aperture stop 16 x illustrated in FIG. 42B.However, it is possible that the aperture stop 16 x illustrated in FIG.42B is used for the first exposure, and the aperture stop 16 willustrated in FIG. 42A is used for the second exposure.

In Modification 2 of the fourth embodiment, the same aperture 22 as theaperture 22 of the aperture stop 16 k (see FIG. 27) is formed in theaperture stop 16 w, and the same apertures 24 b 1-24 b 4, 36 as theapertures 24 b 1-24 b 4, 36 of the aperture stop 16 k are formed in theaperture stop 16 x. It is possible that the same aperture 22 as theaperture 22 of the aperture stop 16 l (see FIG. 28) is formed in theaperture stop 16 w, and the same apertures 24 b 1-24 b 4, 36 a as theapertures 24 b 1-24 b 4, 36 a of the aperture stop 16 l are formed inthe aperture stop 16 x. It is possible that the same aperture 22 as theaperture 22 of the aperture stop 16 m (see FIG. 31) is formed in theaperture stop 16 w, and the same apertures 24 c 1-24 c 4, 36 b as theapertures 24 c 1-24 c 4, 36 b of the aperture stop 16 m are formed inthe aperture stop 16 x. It is possible that the same aperture 22 as theaperture 22 of the aperture stop 16 n (see FIG. 34) is formed in theaperture stop 16 w, and the same apertures 24 b 1-24 b 4, 36 c as theapertures 24 b 1-24 b 4, 36 c of the aperture stop 16 n are formed inthe aperture stop 16 x. It is possible that the same aperture 22 as theaperture 22 of the aperture stop 16 o (see FIG. 37) is formed in theaperture stop 16 w, and the same apertures 24 b 1-24 b 6, 36 as theapertures 24 b 1-24 b 6, 36 of the aperture stop 16 o are formed in theaperture stop 16 x. It is possible that the same aperture 22 as theaperture 22 of the aperture stop 16 p (see FIG. 38) is formed in theaperture stop 16 w, and the same apertures 24 b 1-24 b 8, 36 as theapertures 24 b 1-24 b 8, 36 of the aperture stop 16 p are formed in theaperture stop 16 x.

In Modification 3 of the fourth embodiment, the first exposure is madewith the aperture stop 16 y illustrated in FIG. 43A, and the secondexposure is made with the aperture stop 16 z illustrated in FIG. 43B.However, it is possible that the aperture stop 16 z illustrated in FIG.43B is used for the first exposure, and the aperture stop 16 yillustrated in FIG. 43A is used for the second exposure.

In Modification 3 of the fourth embodiment, the same apertures 22, 24 b1-24 b 4 as the apertures 22, 24 b 1-24 b 4 of the aperture stop 16 k(see FIG. 27) are formed in the aperture stop 16 y, and the sameaperture 36 as the aperture 36 of the aperture stop 16 k is formed inthe aperture stop 16 z. However, it is possible that the same apertures22, 24 b 1-24 b 4 as the apertures 22, 24 b 1-24 b 4 of the aperturestop 16 l (see FIG. 28) are formed in the aperture stop 16 y, and thesame apertures 36 a as the aperture 36 a of the aperture stop 16 l isformed in the aperture stop 16 z. It is possible that the same apertures22, 24 c 1-24 c 4 as the apertures 22, 24 c 1-24 c 4 of the aperturestop 16 m (see FIG. 31) are formed in the aperture stop 16 y, and thesame aperture 36 b as the aperture 36 b of the aperture stop 16 m isformed in the aperture stop 16 z. It is possible that the same apertures22, 24 b 1-24 b 4 as the apertures 22, 24 b 1-24 b 4 of the aperturestop 16 n (see FIG. 34) are formed in the aperture stop 16 y, and thesame aperture 36 c as the aperture 36 c of the aperture stop 16 n isformed in the aperture stop 16 z. It is possible that the same apertures22, 24 b 1-24 b 6 as the apertures 22, 24 b 1-24 b 6 of the aperturestop 16 o (see FIG. 37) are formed in the aperture stop 16 y, and theaperture 36 as the aperture 36 of the aperture stop 16 o is formed inthe aperture stop 16 z. It is possible that the same apertures 22, 24 b1-24 b 8 as the apertures 22, 24 b 1-24 b 8 of the aperture stop 16 p(see FIG. 38) are formed in the aperture stop 16 y, and the sameaperture 36 as the aperture 36 of the aperture stop 16 p is formed inthe aperture stop 16 z.

In the sixth embodiment, the first exposure is made with the aperturesstop 40 a illustrated in FIG. 45A, the second exposure is made with theaperture stop 40 b illustrated in FIG. 45B, and the third exposure ismade with the aperture stop 40 c illustrated in FIG. 45C. However, it ispossible that the aperture stop 40 a illustrated in FIG. 45A is used forthe first exposure, the aperture stop 40 c illustrated in FIG. 45C isused for the second exposure, and the aperture stop 40 b illustrated inFIG. 45B is used for the third exposure. It is possible that theaperture stop 40 b illustrated in FIG. 45B is used for the firstexposure, the aperture stop 40 a illustrated in FIG. 45A is used for thesecond exposure, and the aperture stop 40 c illustrated in FIG. 45C isused for the third exposure. It is possible that the aperture stop 40 billustrated in FIG. 45B is used for the first exposure, the aperturestop 40 c illustrated in FIG. 45C is used for the second exposure, andthe aperture stop 40 a illustrated in FIG. 45A is used for the thirdexposure. It is possible that the aperture stop 40 c illustrated in FIG.45C is used for the first exposure, the aperture stop 40 a illustratedin FIG. 45A is used for the second exposure, and the aperture stop 40 billustrated in FIG. 45B is used for the third exposure. It is possiblethat the aperture stop 40 c illustrated in FIG. 45C is used for thefirst exposure, the aperture sop 40 b illustrated in FIG. 45B is usedfor the second exposure, and the aperture stop 40 a illustrated in FIG.45A is used for the third exposure.

In Modification 1 of the sixth embodiment, the first exposure is madewith the aperture stop 40 d illustrated in FIG. 46A, and the secondexposure is made with the aperture stop 40 e illustrated in FIG. 46B.However, it is possible that the aperture stop 40 e illustrated in FIG.46B is used for the first exposure, and the aperture stop 40 dillustrated in FIG. 46A is used for the second exposure.

In Modification 2 of the sixth embodiment, the first exposure is madewith the aperture stop 40 f illustrated in FIG. 47A, and the secondexposure is made with the aperture stop 40 g illustrated in FIG. 47B.However, it is possible that the aperture stop 40 g illustrated in FIG.47B is used for the first exposure, and the aperture stop 40 fillustrated in FIG. 47A is used for the second exposure.

In Modification 3 of the sixth embodiment, the first exposure is madewith the aperture stop 40 h illustrated in FIG. 48A, and the secondexposure is made with the aperture stop 40 i illustrated in FIG. 48B.However, it is possible that the aperture stop 40 i illustrated in FIG.48B is used for the first exposure, and the aperture stop 40 hillustrated in FIG. 48A is used for the second exposure.

1. A semiconductor device manufacturing method comprising transferring a pattern formed on a reticle to a semiconductor substrate by an exposure with oblique incidence illumination, making the exposure with oblique incidence illumination comprising: making an exposure with a first illumination source aperture including a first annular-shaped aperture formed in a center part, a first circular-shaped shade region existing in the first annular-shaped aperture; and making an exposure with a second illumination source aperture including a plurality of second apertures formed in a peripheral part.
 2. The semiconductor device manufacturing method according to claim 1, wherein the making the exposure with oblique incidence illumination further comprises making an exposure with a third illumination source aperture including a third annular-shaped aperture having an inner diameter which is larger than an outer diameter of the first annular-shaped aperture, a second circular-shaped shade region existing in the third annular-shaped aperture.
 3. The semiconductor device manufacturing method according to claim 1, wherein the first illumination source aperture further includes a third annular-shaped aperture having an inner diameter which is larger than an outer diameter of the first annular-shaped aperture, and annular-shaped shade region existing between the first annular-shaped aperture and the third annular-shaped aperture.
 4. The semiconductor device manufacturing method according to claim 1, wherein the reticle further has an assist pattern arranged near the pattern.
 5. The semiconductor device manufacturing method according to claim 1, wherein the exposure with the first illumination source aperture and the exposure with the second illumination source aperture are made to the same area of the semiconductor substrate.
 6. A semiconductor device manufacturing method comprising transferring a pattern formed on a reticle to a semiconductor substrate by an exposure with oblique incidence illumination, in making the exposure with oblique incidence illumination, the exposure is made with an illumination source aperture including a first aperture, a second annular-shaped aperture formed around the first aperture, and a third annular-shaped aperture formed around the second annular-shaped aperture, a first annular-shaped shade region existing between the first aperture and the second annular-shaped aperture, a second annular-shaped shade region existing between the second annular-shaped aperture and the third annular-shaped aperture.
 7. The semiconductor device manufacturing method according to claim 6, wherein the reticle further has an assist pattern arranged near the pattern.
 8. A semiconductor device manufacturing method comprising transferring a pattern formed on a reticle to a semiconductor substrate by an exposure with oblique incidence illumination, making the exposure with oblique incidence illumination comprises: making an exposure with a first illumination source aperture including a first aperture; making an exposure with a second illumination source aperture including a second annular-shaped aperture having an inner diameter which is larger than an outer diameter of the first aperture, a first circular-shaped shade region existing in the second annular-shaped aperture; and making an exposure with a third illumination source aperture including a third annular-shaped aperture having an inner diameter which is larger than an outer diameter of the second annular-shaped aperture, a second circular shaped shade region existing in the third annular-shaped aperture.
 9. The semiconductor device manufacturing method according to claim 8, wherein the reticle further has an assist pattern arranged near the pattern.
 10. The semiconductor device manufacturing method according to claim 8, wherein the exposure with the first illumination source aperture, the exposure with the second illumination source aperture and the exposure with the third illumination source aperture are made to the same area of the semiconductor substrate. 